A Polyvinylidene fluoride (PVDF) based bimorph actuator for high speed laser beam manipulation
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Institute of Electrical and Electronics Engineers2009
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World Scientific Publ Co Inc, 687 Hartwell St, Teaneck, Nj 07666 Usa2009
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We report on lattice-matched InAlN/GaN MOSHEMTs with an oxide-filled recess, self-aligned to the gate prepared by thermal oxidation at 800 degrees C in oxygen atmosphere. The device delivered a maximum current density of 2.4 A/mm. Pulse measurements showed ...
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