Publication

Bias-dependent absorption coefficient of the absorber section in GaN-based multisection laser diodes

Related publications (42)

Chip-based, single-frequency and low phase-noise integrated photonic laser diodes emitting in the violet (412 nm) and blue (461 nm) regime are demonstrated. The GaN-based edge-emitting laser diodes were coupled to high-quality on-chip micro-resonators for ...

Optica Publishing Group2023

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Nanocavities formed by ultrathin metallic gaps, such as the nanoparticle-on-mirror geometry, permit the reproducible engineering and enhancement of light-matter interaction thanks to mode volumes reaching the smallest values allowed by quantum mechanics. A ...

arXiv2023

Additive manufacturing (AM) is a group of processing technologies which has the potential to revolutionize manufacturing by allowing easy manufacturing of complex shapes and small series. One AM-method which is of high interest for processing of metals is ...

EPFL2021

Phase transitions of thermal systems and the laser threshold were first connected more than forty years ago. Despite the nonequilibrium nature of the laser, the Landau theory of thermal phase transitions, applied directly to the Scully-Lamb laser model (SL ...

AMER PHYSICAL SOC2021

We characterize a 1.14 mu m ultrastable semiconductor laser system for precision spectroscopy of Tm inner-shell clock transition using a frequency comb. We stabilize both the repetition and the carrier-envelope offset frequencies of a commercial Ti : sapph ...

SPRINGER2019

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Topological insulators constitute a fascinating class of quantum materials with nontrivial, gapless states on the surface and insulating bulk states. By revealing the optoelectronic dynamics in the whole range from femto- to microseconds, we demonstrate th ...

Amer Chemical Soc2017

Continuous Wave Blue Lasing in III-Nitride Nanobeam Cavity on Silicon

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Noelia Vico Triviño

IIIV photonics on silicon is an active and promising research area. Here, we demonstrate room-temperature (RT) lasing in short-wavelength III-nitride photonic crystal nanobeam cavities grown on silicon featuring a single InGaN quantum well (QW). In the low ...

Amer Chemical Soc2015

The III-nitride semiconductor material system - (InAlGa)N - is of highest interest for optoelectronic applications due to its direct bandgap, tunable from the ultraviolet to the infrared spectral range. The most well-known are white light-emitting diodes, ...

EPFL2014

Double-diamond high-contrast-gratings vertical external cavity surface emitting laser

Elyahou Kapon, Vladimir Iakovlev, Alexei Sirbu, Pascal Gallo

A new design of vertical external cavity surface emitting laser (VECSEL) with diamond-based high contrast gratings is proposed. The self-consistent model of laser operation has been calibrated based on experimental results and used to optimize the new prop ...

Iop Publishing Ltd2014

Quantum efficiency of technical metal photocathodes under laser irradiation of various wavelengths

Christoph Peter Hauri, Fernando Ardana Lamas

Quantum efficiency studies for various laser wavelengths and various technical metal surfaces were carried out in a dedicated unbaked vacuum chamber in the absence of a significant electrical field. Copper, magnesium, aluminum, and aluminum-lithium photoca ...

Springer Verlag2013

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