MESFETA MESFET (metal–semiconductor field-effect transistor) is a field-effect transistor semiconductor device similar to a JFET with a Schottky (metal–semiconductor) junction instead of a p–n junction for a gate. MESFETs are constructed in compound semiconductor technologies lacking high quality surface passivation, such as gallium arsenide, indium phosphide, or silicon carbide, and are faster but more expensive than silicon-based JFETs or MOSFETs.
Subthreshold conductionSubthreshold conduction or subthreshold leakage or subthreshold drain current is the current between the source and drain of a MOSFET when the transistor is in subthreshold region, or weak-inversion region, that is, for gate-to-source voltages below the threshold voltage. The amount of subthreshold conduction in a transistor is set by its threshold voltage, which is the minimum gate voltage required to switch the device between on and off states.
High-voltage direct currentA high-voltage direct current (HVDC) electric power transmission system (also called a power superhighway or an electrical superhighway) uses direct current (DC) for electric power transmission, in contrast with the more common alternating current (AC) transmission systems. Most HVDC links use voltages between 100 kV and 800 kV. However, a 1,100 kV link in China was completed in 2019 over a distance of with a power capacity of 12 GW. With this dimension, intercontinental connections become possible which could help to deal with the fluctuations of wind power and photovoltaics.
History of the transistorA transistor is a semiconductor device with at least three terminals for connection to an electric circuit. In the common case, the third terminal controls the flow of current between the other two terminals. This can be used for amplification, as in the case of a radio receiver, or for rapid switching, as in the case of digital circuits. The transistor replaced the vacuum-tube triode, also called a (thermionic) valve, which was much larger in size and used significantly more power to operate.
High-electron-mobility transistorA high-electron-mobility transistor (HEMT or HEM FET), also known as heterostructure FET (HFET) or modulation-doped FET (MODFET), is a field-effect transistor incorporating a junction between two materials with different band gaps (i.e. a heterojunction) as the channel instead of a doped region (as is generally the case for a MOSFET). A commonly used material combination is GaAs with AlGaAs, though there is wide variation, dependent on the application of the device.
Threshold displacement energyIn materials science, the threshold displacement energy (T_d) is the minimum kinetic energy that an atom in a solid needs to be permanently displaced from its site in the lattice to a defect position. It is also known as "displacement threshold energy" or just "displacement energy". In a crystal, a separate threshold displacement energy exists for each crystallographic direction. Then one should distinguish between the minimum (T_d,min) and average (T_d,ave) over all lattice directions' threshold displacement energies.
RF power amplifierA radio-frequency power amplifier (RF power amplifier) is a type of electronic amplifier that converts a low-power radio-frequency signal into a higher-power signal. Typically, RF power amplifiers are used in the final stage of a radio transmitter, their output driving the antenna. Design goals often include gain, power output, bandwidth, power efficiency, linearity (low signal compression at rated output), input and output impedance matching, and heat dissipation.
Radiation therapyRadiation therapy or radiotherapy, often abbreviated RT, RTx, or XRT, is a therapy using ionizing radiation, generally provided as part of cancer treatment to control or kill malignant cells and normally delivered by a linear accelerator. Radiation therapy may be curative in a number of types of cancer if they are localized to one area of the body. It may also be used as part of adjuvant therapy, to prevent tumor recurrence after surgery to remove a primary malignant tumor (for example, early stages of breast cancer).
Linear integrated circuitA linear integrated circuit or analog chip is a set of miniature electronic analog circuits formed on a single piece of semiconductor material. The voltage and current at specified points in the circuits of analog chips vary continuously over time. In contrast, digital chips only assign meaning to voltages or currents at discrete levels. In addition to transistors, analog chips often include a larger number of passive elements (capacitors, resistors, and inductors) than digital chips.
Background radiationBackground radiation is a measure of the level of ionizing radiation present in the environment at a particular location which is not due to deliberate introduction of radiation sources. Background radiation originates from a variety of sources, both natural and artificial. These include both cosmic radiation and environmental radioactivity from naturally occurring radioactive materials (such as radon and radium), as well as man-made medical X-rays, fallout from nuclear weapons testing and nuclear accidents.
