Probing the electrical properties of highly-doped Al:ZnO nanowire ensembles
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It is shown that during the growth of InxGa1-xAs on GaAs, the strain-induced lattice distortion oscillates as a function of monolayer completion in both purely 2D and quasi-2D layer-by-layer growth regimes. This is explained by considering that nontetragon ...
To study the mechanism of zinc diffusion in GaAs, we diffused zinc from a ZnAs2 source into Si-doped GaAs samples (n almost-equal-to 1.3 X 10(18) cm-3) at different temperatures (from 575-degrees-C up to 700-degrees-C) in sealed evacuated quartz tubes. The ...
