Charge transition levels of nitrogen dangling bonds at Si/SiO2 interfaces: A first-principles study
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Band-structure (BS) calculations of the density of states (DOS) using the full potential augmented plane waves code WIEN97 were performed on the four single-valence vanadium oxides VO, V2O3, VO2 and V2O5. The DOS are discussed with respect to the distortio ...
We discuss the structural, electronic and dielectric properties of a model structure of the Si(100)-SiO2 interface that accounts for the amorphous nature of the oxide. After showing that the structural properties of this model are consistent with a variety ...
The fluorine incorporation into HfO2 with oxygen vacancies has been investigated using first principles calculations. The authors show that atomic fluorine can efficiently passivate the neutral oxygen vacancy with excess energies of 4.98 and 4.39 eV for th ...
The magneto-luminescence of GaN/AlGaN quantum wells in fields up to 52 T shows a field dependence that is strongly dependent on the well width. Strong redshifts are seen for the narrowest wells that are attributed to a Zeeman splitting. This is unexpected, ...
We have analyzed the photoresponse of solar blind AlGaN Schottky barrier photodiodes below the alloy band gap energy, in the 3.5-4.5 eV range, and we show that it is dominated by internal photoemission. The n-type Schottky barrier height is shown to increa ...
The effect of the excitation wavelength on the charge recombination (CR) dynamics of several donor−acceptor complexes (DACs) composed of benzene derivatives as donors and of tetracyanoethylene or pyromellitic dianhydride as acceptors has been investigated ...
We review the structural and hyperfine properties of Si dangling bond defects occurring in amorphous SiO2 and at various Si-SiO2 interfaces. These defects have in common a singly occupied orbital on a, trivalent Si Centre. We first briefly summarize the mo ...
We study the interfacial electronic properties of a model Si-SiO2-Si structure which is intended to simulate the substrate-oxide-polysilicon stack in metal-oxide-semiconductor devices. The structural properties of this model are shown to match closely thos ...
We analyze the electronic properties of quantum wires with a Z-like profile within four-band models for the valence band of a semiconductor of diamond and zinc blende type. Group-theoretical considerations show that the valence-band structure is doubly deg ...
Selective photoluminescence experiments have been used to analyse the neutral donor bound exciton spectra in n type wurtzite GaN epitaxial layers deposited on 6H-SiC, Al2O3 and GaN substrates, In heterostructure layers, the existence of residual strain dis ...