Publication

Charge transition levels of nitrogen dangling bonds at Si/SiO2 interfaces: A first-principles study

Related publications (115)

About
Privacy
Disclaimer

Graph Chatbot

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

Charge transition levels of nitrogen dangling bonds at Si/SiO2 interfaces: A first-principles study

Graph Chatbot

Chat with Graph Search

Color centers in NaCl by hybrid functionals

Insight from First-Principles Calculations into the Interactions between Hydroxybenzoic Acids and Alkali Chloride Surfaces

Alignment of defect levels and band edges through hybrid functionals: Effect of screening in the exchange term

Theoretical analysis of the momentum-dependent loss function of bulk Ag

Effects of filling in CoSb3: Local structure, band gap, and phonons from first principles

Anomalous composition dependence of the band gap pressure coefficients in In-containing nitride semiconductors

First principles investigation of defect energy levels at semiconductor-oxide interfaces: Oxygen vacancies and hydrogen interstitials in the Si-SiO2-HfO2 stack

Band offsets at the Ge/GeO2 interface through hybrid density functionals

Direct and Indirect Effects of Filling on Electronic Structure of Skutterudites

Hybrid-functional calculations with plane-wave basis sets: Effect of singularity correction on total energies, energy eigenvalues, and defect energy levels