Physical Properties of Al1-xInxN/(AIN)/GaN (0.07<=x<=0.21) Heterostructures and their Application for High Power Electronics
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Nanocrystalline anatase titanium dioxide powders were produced by a hydrothermal synthesis route in pure form and substituted with trivalent Ga3+ and Y3+ or pentavalent Nb5+ with the intention of creating acceptor or donor states, respectively. The electri ...
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Semiconductor nanowires are an emerging class of materials with great potential for applications in future electronic devices. The small footprint and the large charge-carrier mobilities of nanowires make them potentially useful for applications with high- ...
This thesis aims at the site-specific realization of self-assembled field-effect transistors (FETs) based on semiconducting Zinc oxide NWs and their application towards chemical and bio-sensing in liquid medium. At first, a solution based growth method for ...
This work presents analyses and developments in nanofabrication using stencil lithography and its application for electronics and biosensing. Metallic nanostructures are fabricated using stencil lithography studying the pattern transfer from the stencil to ...
It is observed experimentally that high electron mobility transistor devices with short channel length processed from nitride AlInN/AlN/GaN heterostructures containing 2D electron gases (2DEGs) with densities beyond 2 x 10(13) cm(-2) exhibit temperatures u ...
We have developed two fundamental components to manufacture a prosthetic skin: a stretchable pressure sensor formed of piezoelectric elastomer/ferroelectret multilayer sandwiched between stretchable electrodes and stretchable thin-film transistors. The com ...
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The invention relates to a device comprising a conductive surface (12) and electrical contacts (14) by which an electric current is able to be passed. Said electrical contacts (14) comprise conductive seeds (16) deposited on the conductive surface (12), an ...
Since their discovery in 1991 [1], carbon nano-tubes (CNTs), have been considered among the most promising materials for logic nanodevices, interconnects and nanoelectromechanical systems (NEMS). They have remarkably unique mechanical (Youngs modulus up to ...
We report the large-signal performance of high electron mobility transistors (HEMTs) fabricated on GaN- and AlN-capped AlInN/GaN epilayers grown on semi-insulating SiC substrates. Large-signal measurements at 10 and 40 GHz are presented with both gate and ...