Macroscopic Theory of Charged Domain Walls in Ferroelectrics
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The size, shape, and polarization orientation of fatigued areas formed during the suppression of the switchable polarization (P-r(s)) (fatigue) in Ft-FZT-Pt ferroelectric capacitors (FECAPs), were observed by means of atomic force microscopy and by imaging ...
Ferroelectric, dielectric and piezoelectric properties of ferroelectric thin films and ceramics are reviewed with the aim of providing an insight into different processes which may affect the behaviour of ferroelectric devices, such as ferroelectric memori ...
The most significant advance in this field in the past year has been the demonstration that single-crystal langasite, La3Ga5SiO14, can be used, at least at high frequencies, at temperatures up to 1000 degrees C. New evidence suggests that domain-wall contr ...
Fatigue phenomena occurring in Pb(ZrxTi1-x)O-3 ferroelectric thin-film capacitors (FECAP) with Pt electrodes are studied by means of conduction measurements in the cold-field-emission (tunneling) regime. We have determined that conduction in virgin FECAPs ...
The electronic ground state of a periodic crystalline solid is usually described in terms of extended Bloch orbitals; localized Wannier functions can alternatively be used. These two representations are connected by families of unitary transformations, car ...
Electrostatic effects which take place in group-m nitrides in their wurtzite crystallographic phase have important consequences on the optical properties of (Al,Ga)N/GaN multiple quantum wells. A low-temperature photoluminescence study shows that the behav ...
Transient photocurrents are investigated in ferroelectric lead zirconate titanate (PZT) films illuminated by laser pulses in the spectral range of 340-380 nm. At low electric fields, the photocurrent is sensitive to the ferroelectric polarization state and ...
(Al,Ga)N/GaN quantum wells have been studied by temperature-dependent luminescence and reflectivity. The samples were grown by molecular beam epitaxy on (0001) sapphire substrates, and well widths were varied from 3 to 15 monolayers (ML's) with a 2-ML incr ...
A surprising non-cumulative effect of the degradation mechanism (fatigue) of the switched polarization (P-r(s)), was observed in MOCVD and sol-gel prepared Pb(Zr0.47Ti0.53)O-3 (PZT) ferroelectric thin films capacitors (FECAP) with Pt-electrodes. This effec ...
The weak-field dielectric properties of ordered, disordered, and lead-deficient disordered Pb(Sc0.5Ta0.5)O-3 (PST) ceramics (PST-O, PST-D, and PST-DV, respectively) were investigated under various de-bias conditions. The de-bias field influences the parael ...
