Publication

Kinetics of a-Si:H bulk defect and a-Si:H/c-Si interface-state reduction

Related publications (40)

In this work, we studied the potential of using thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) for two main purposes: introducing an n-type passivating contact at the front of a TOPCon solar cell, or simplifying the fabrication o ...

EPFL2024

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Crystalline silicon (c-Si) photovoltaics has long been considered energy intensive and costly. Over the past decades, spectacular improvements along the manufacturing chain have made c-Si a low-cost source of electricity that can no longer be ignored. Over ...

2022

Passivating Polysilicon Recombination Junctions for Crystalline Silicon Solar Cells

Christophe Ballif, Franz-Josef Haug, Aïcha Hessler-Wyser, Quentin Thomas Jeangros, Andrea Ingenito, Audrey Marie Isabelle Morisset, Philippe Wyss, Mario Joe Lehmann

Polysilicon recombination junctions whose n-type bottom layers double as a passivating contact to the silicon surface are investigated. Such recombination junctions are a key element in the interconnection of tandem devices with a silicon bottom cell, and ...

2021

Studying the wettability of Si and eutectic Si-Zr alloy on carbon and silicon carbide by sessile drop experiments

Ludger Weber, Alberto Ortona, Manoj Kondibhau Naikade

The contact angles of two different systems, molten silicon and a eutectic Si-8 at. pct Zr alloy and their evolution over timeon vitreous carbon and polycrystalline silicon carbide (SiC) substrates were investigated at 1500 degrees C under vacuum, as well ...

ELSEVIER SCI LTD2019

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Intrinsic amorphous silicon provides excellent surface passivation on crystalline silicon. It has previously been shown, that carriers that are photo generated in the amorphous silicon can be efficiently electronically injected into the crystalline silicon ...

ELSEVIER SCIENCE BV2018

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IEEE2018

Measuring carrier injection from amorphous silicon into crystalline silicon using photoluminescence

Gizem Nogay, Philipp Friedrich Hermann Löper

In devices with intrinsic amorphous silicon layer on a crystalline silicon substrate, the light absorbed in the amorphous layer can be weakly electronically coupled into the silicon base. Such carrier injection has previously been reported from measurement ...

WILEY2018

Full-Area Passivating Contacts with High and Low Thermal Budgets: Solutions for High Efficiency c-Si Solar Cells

Gizem Nogay

Today more than 90% of the global PV market is covered by c-Si solar cells which are limited by recombination losses at the metal-semiconductor interface. This recombination path can be avoided by separating the metal from the c-Si wafer by introducing a b ...

EPFL2018

Temperature dependence of hydrogenated amorphous silicon solar cell performances

Christophe Ballif, Franz-Josef Haug, Michael Elias Stückelberger, Yannick Samuel Riesen

Thin-film hydrogenated amorphous silicon solar (a-Si:H) cells are known to have better temperature coefficients than crystalline silicon cells. To investigate whether a-Si:H cells that are optimized for standard conditions (STC) also have the highest energ ...

American Institute of Physics2016

Efficient silicon solar cells with dopant-free asymmetric heterocontacts

Christophe Ballif, Jonas Geissbühler, Stefaan De Wolf

A salient characteristic of solar cells is their ability to subject photo-generated electrons and holes to pathways of asymmetrical conductivity-'assisting' them towards their respective contacts. All commercially available crystalline silicon (c-Si) solar ...

Nature Publishing Group2016

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