Experimental confirmation of temperature dependent negative capacitance in ferroelectric field effect transistor
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Boltzmann electron energy distribution poses a fundamental limit to lowering the energy dissipation of conventional MOS devices, a minimum increase of the gate voltage, i.e. 60 mV, is required for a 10-fold increase in drain-to-source current at 300 K. Neg ...
The capability of switching the spontaneous polarisation under an applied electric field in ferroelectric materials can be exploited for the use in low power, non-volatile, re-writable memory devices. Currently available commercially is ferroelectric rando ...
We studied polarization switching of 295 nm thick -oriented-Pb(Zr0.45Ti0.55)O-3 (PZT) thin-film capacitors through a polarization hysteresis loop and piezoelectric force microscopy (PFM) on top of the Pt electrode. Positive voltage pulses of 450 kV/cm ...
This work experimentally demonstrates that the negative capacitance effect can be used to significantly improve the key figures of merit of tunnel field effect transistor (FET) switches. In the proposed approach, a matching condition is fulfilled between a ...
In this paper, the reliability of tunable ferroelectric thin film capacitors has been addressed. The long term stability of tunable capacitors based on Ba0.3Sr0.7TiO3 films deposited by chemical solution deposition onto an alumina substrate was investigate ...