Indium gallium arsenideIndium gallium arsenide (InGaAs) (alternatively gallium indium arsenide, GaInAs) is a ternary alloy (chemical compound) of indium arsenide (InAs) and gallium arsenide (GaAs). Indium and gallium are group III elements of the periodic table while arsenic is a group V element. Alloys made of these chemical groups are referred to as "III-V" compounds. InGaAs has properties intermediate between those of GaAs and InAs. InGaAs is a room-temperature semiconductor with applications in electronics and photonics.
Numerical apertureIn optics, the numerical aperture (NA) of an optical system is a dimensionless number that characterizes the range of angles over which the system can accept or emit light. By incorporating index of refraction in its definition, NA has the property that it is constant for a beam as it goes from one material to another, provided there is no refractive power at the interface. The exact definition of the term varies slightly between different areas of optics.
Aperture synthesisAperture synthesis or synthesis imaging is a type of interferometry that mixes signals from a collection of telescopes to produce images having the same angular resolution as an instrument the size of the entire collection. At each separation and orientation, the lobe-pattern of the interferometer produces an output which is one component of the Fourier transform of the spatial distribution of the brightness of the observed object. The image (or "map") of the source is produced from these measurements.
Fast EthernetIn computer networking, Fast Ethernet physical layers carry traffic at the nominal rate of 100 Mbit/s. The prior Ethernet speed was 10 Mbit/s. Of the Fast Ethernet physical layers, 100BASE-TX is by far the most common. Fast Ethernet was introduced in 1995 as the IEEE 802.3u standard and remained the fastest version of Ethernet for three years before the introduction of Gigabit Ethernet. The acronym GE/FE is sometimes used for devices supporting both standards.
Semiconductor deviceA semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material (primarily silicon, germanium, and gallium arsenide, as well as organic semiconductors) for its function. Its conductivity lies between conductors and insulators. Semiconductor devices have replaced vacuum tubes in most applications. They conduct electric current in the solid state, rather than as free electrons across a vacuum (typically liberated by thermionic emission) or as free electrons and ions through an ionized gas.
Synthetic-aperture radarSynthetic-aperture radar (SAR) is a form of radar that is used to create two-dimensional images or three-dimensional reconstructions of objects, such as landscapes. SAR uses the motion of the radar antenna over a target region to provide finer spatial resolution than conventional stationary beam-scanning radars. SAR is typically mounted on a moving platform, such as an aircraft or spacecraft, and has its origins in an advanced form of side looking airborne radar (SLAR).
Diaphragm (optics)In optics, a diaphragm is a thin opaque structure with an opening (aperture) at its center. The role of the diaphragm is to stop the passage of light, except for the light passing through the aperture. Thus it is also called a stop (an aperture stop, if it limits the brightness of light reaching the focal plane, or a field stop or flare stop for other uses of diaphragms in lenses). The diaphragm is placed in the light path of a lens or objective, and the size of the aperture regulates the amount of light that passes through the lens.
