Mihai Adrian Ionescu, Didier Bouvet, Kirsten Emilie Moselund, Vincent Pott
In this paper, we report very abrupt current switching and hysteresis effects due to saddle point and impact ionization in low doped n-channel Omega-Gate MOSFET (Omega-MOSFET). The Omega-MOSFETs are fabricated on low-doped (8x10(14)cm(-3)) bulk silicon by ...
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