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Graphite is a highly anisotropic crystal with a quasi-two-dimensional electronic structure exhibiting high intrinsic charge carrier mobility. Here, we investigate the effect of an electric field on the resistance of individual graphite crystallites with a thickness on the order of 40 nm. Ambipolar field-effect behavior was achieved with the aid of a polymer electrolyte gate. By optimizing the device geometry, devices with an on/off current ratio of up to 4 and carrier mobilities of around 100 cm(2)/Vs could be attained directly on the crystallites. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4719204]
Klaus Kern, Shai Mangel, Alessio Scavuzzo, Tobias Wollandt
Oleg Yazyev, Quansheng Wu, Cheng Shen, Na Li, Jian Tang, Rong Yang
Klaus Kern, Christian Alexander Stephan Dette, Shai Mangel, Katharina Polyudov, Tobias Wollandt