Germanium core-level shifts at Ge/GeO2 interfaces through hybrid functionals

The Ge core-level shift across the Ge/GeO2 interface is determined within semilocal and hybrid density functional schemes. We first assess the accuracy achieved within these theoretical frameworks by comparing calculated and measured core-level shifts for a set of Ge-based molecules. The comparison with experimental data results in rms deviations of 0.19 and 0.09 eV for core-level shifts calculated with semilocal and hybrid density functionals, respectively. We also compare calculated core-level shifts at the Ge(001)-c(4 x 2) surface with high-resolution x-ray photoemission spectra finding similar agreement. We then turn to the Ge/GeO2 interface, which we describe with atomistic superlattice models showing alternating layers of Ge and GeO2. The adopted models include a substoichiometric transition region in which all Ge atoms are fourfold coordinated and all O atoms are twofold coordinated, as inferred for Si/SiO2 interfaces. Since the calculation of core-level shifts involves charged systems subject to finite-size effects, we use two different methods to ascertain the core-level shift Delta E-XPS between the oxidation state Ge-0 and Ge+4 across the interface. In the first method, core-hole relaxations are first evaluated in bulk models of the interface components and then complemented by the initial-state shift calculated across the interface, while the second method consists of direct interface calculations corrected through classical electrostatics. Using the more accurate hybrid functional scheme, we obtain a shift Delta E-XPS of 2.7 +/- 0.1 eV. This value is significantly lower than experimental data, which typically fall around 3.3 eV or higher, but the underestimation is consistent with that found for the valence band offset of the same model. This leads to the conclusion that the adopted model structures yield an incorrect description of the interface dipole and emphasizes that Ge/GeO2 interfaces possess different structural properties than their silicon counterparts.

Electronic and Structural Properties of the Ge/GeO2 Interface through Hybrid Functionals

Jan Felix Binder

The performance of silicon based microelectronic circuits reaches the end of the roadmap. New material systems are required for further improvements in speed and power consumption. Germanium is a possible candidate to substitute silicon for microelectronic devices. Its hole mobility is the highest of all semiconductor materials. Together with its lower band gap it could be an ideal material for energy-saving devices. This thesis is dedicated to first principles studies of the Ge/GeO2 interface through hybrid density functional theory. The substoichiometric region of the interface is of special interest. A wide substoichiometric region is supported by total energy calculations of a set of crystalline model systems. An unexpected structure organization was found through molecular dynamics simulations of substoichiometric GeO. We found that a majority of germanium and oxygen atoms are threefold coordinated, forming valence alternation pairs (VAPs). A detailed energetic analysis located the VAPs in the low-oxygen region of the interface. VAPs show interesting properties : They are prone to charge trapping. The electron trapping level might explain the bad performance of n-type doped devices. Furthermore, VAPs might be at the origin of the difficulties of H passivation at the Ge/GeO2 interface. Since threefold Ge atoms are negatively charged and threefold O atoms are positively charged, VAPs give rise to dipoles. These dipoles may reduce the interface dipole created by the electronegativity difference in the Ge-3O bond. With this mechanism, we can explain the wide range of experimental valence band offsets (VBOs) with the occurrence of different density levels of VAPs at the Ge/GeO2 interface. This suggestion is further confirmed by the determination of the VBO and Ge 3d core-level shift for an atomistic model structure of the Ge/GeO2 interface. Both values are systematically lower than typical experimental values for the Ge/GeO2 interface. Taking the extra dipole into account, our calculated VBOs and XPS shifts are in excellent agreement with experimental values. These results confirm that the structural properties of the Ge/GeO2 interface deviate significantly from its Si counterpart.

EPFL2012

Charge transition levels of carbon-, oxygen-, and hydrogen-related defects at the SiC/SiO2 interface through hybrid functionals

Audrius Alkauskas, Peter Broqvist, Fabien Devynck, Alfredo Pasquarello

We calculate charge transition levels of various defects at the SiC/SiO2 interface within a scheme based on hybrid density functionals, which accurately reproduce the involved band gaps and band offsets. The defect levels are first evaluated in bulk models of the interface components and then aligned with respect to the interface band diagram through the use of a model interface showing good structural and electronic properties. Interface-specific polarization effects are evaluated separately through classical electrostatics. We considered carbon-related defects involving single atoms and dimers in both the crystalline SiC substrate and the amorphous SiO2 oxide. Our investigation also comprises oxygen-and hydrogen-related defects, including the Si-Si bond (O vacancy), the Si-2-C-O structure, the peroxy linkage, and the hydrogen bridge (Si-H-Si). Among the defects studied, the Si-2-C-O structure represents the best candidate for the high defect density measured near the conduction band of SiC.

2011

Properties of Ir4 clusters in the gas phase and on oxide substrates

Vladan Stevanovic

Results of a theoretical study on the properties of Ir4 clusters in the gas–phase and on oxide surfaces are presented. The work is based on density functional theory (DFT) within the generalized gradient approximation (GGA) and ultrasoft pseudopotentials. Properties of a small particle such as Ir4 cluster are entirely determined by its geometry. The already known result that the most stable form of Ir4 in the gas–phase is the square structure which is significantly more stable than the butterfly and tetrahedron is confirmed. This result is in contradiction with experiments which indicate that the oxide supported Ir4 adopts a tetrahedral configuration. It is shown in this thesis that the chemical environment has a strong influence on the relative stability of Ir4 clusters. On MgO(100) surface, the square isomer remains the most stable Ir4 structure, well separated in energy from the other two. Moreover, the tetrahedron is heavily distorted by the interaction with the surface oxygen. Presence of point defects (neutral and charged O vacancies) affects the energy ordering making tetrahedron and square very close in energy, but the structural distortion of the tetrahedron is even bigger and the predicted data do not correspond to experiments. On TiO2(110) the tetrahedron and square structures become degenerate and the butterfly becomes the least stable isomer. Moreover, structural distortions are very small, in agreement with experimental data. It is shown that the TiO2 surface influences the relative stability of the three isomers through a particularly strong electrostatic field. Interactions of Ir4 with H, C and O atoms as well as with CO molecules have been studied. Adsorption of a single C atom strongly influences the relative stability of the three isomers. Upon C adsorption, the butterfly becomes the most stable gas–phase isomer while on both surfaces the tetrahedron is the most probable structure. Adsorption of a single H or O atom does not produce the same effect. The interaction with CO molecules is also important given the experimental procedure used for producing supported Ir4 clusters. It is shown that on MgO(100), CO dissociation is as probable as the competing process CO desorption justifying the presence of carbon adatoms on Ir4 clusters which brings theoretical predictions in better agreement with experimental data.

EPFL2009