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First principles study of electronic and structural properties of the Ge/GeO2 interface

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First principles study of electronic and structural properties of the Ge/GeO2 interface

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Band alignment at the CaF2/Si(111) interface through advanced electronic structure calculations

Alignment of energy levels in amorphous oxides and at semiconductor-water interfaces

Oxygen DX center in In0.17Al0.83N: Nonradiative recombination and persistent photoconductivity

Identification of Semiconductor Defects through Constant-Fermi-Level Ab Initio Molecular Dynamics: Application to GaAs

Nature of electron trap states under inversion at In0.53Ga0.47As/Al2O3 interfaces

Fermi-level pinning through defects at GaAs/oxide interfaces: A density functional study

Origin of Fermi-level pinning at GaAs/oxide interfaces through the hybrid functional study of defects

First-principles determination of defect energy levels through hybrid density functionals and GW

Interfacial Ga-As suboxide: Structural and electronic properties

Defect levels at GaAs/Al2O3 interfaces: As-As dimer vs. Ga dangling bond