RF MEMS Shunt Capacitive Switches Using AlN Compared to Si3N4 Dielectric
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The capability of switching the spontaneous polarisation under an applied electric field in ferroelectric materials can be exploited for the use in low power, non-volatile, re-writable memory devices. Currently available commercially is ferroelectric rando ...
Alginate gel formation on-chip is presented in the first part of this thesis. The technique allows immobilization, and release, of biological cells on-chip. Furthermore, via layer by layer deposition, a locally heterogeneous environment can be generated at ...
Using surface micromachining technology, we fabricated nanofluidic devices with channels down to 10̂nm deep, 200̂nm wide and up to 8̂cm long. We demonstrated that different materials, such as silicon nitride, polysilicon and silicon dioxide, combined with ...
Intrinsic, thermal, and hygroscopic contributions to the in-plane residual stress in silicon nitride films on polyimide substrates are identified, based on iso- hygric thermal ramps and isothermal relative humidity jumps, combined with non-linear elastic m ...
In this work a prototype of micro force sensor of range μN...mN is presented. Instead of the traditional piezoresistive strain sensing through thick-film resistors used for higher forces, a more effective principle is used: measurement of beam displacement ...
We develop a theory for investigating atomic-scale dielectric permittivity profiles across interfaces between insulators. A local susceptibility chi(x;omega) is introduced to describe variations of the dielectric response over length scales of the order of ...
A high capacitive ratio RF MEMS switch, with low-actuation voltage is designed, fabricated and experimentally validated on high-resistivity silicon (HRS) substrate. Thanks to very good fabrication control of all steps and to the high dielectric constant of ...
We study the dielectric susceptibility of liquid hydrogen chloride at a temperature of 313 K using ab initio molecular dynamics evolving, in a homogeneous electric field. For an evolution in absence of electric field, the calculated neutron structure facto ...
The change in permittivity of bismuth zinc niobate (BZN) films with the cubic pyrochlore structure under an applied electric field was measured as a function of temperature. Dielectric measurements were performed using parallel-plate capacitor structures w ...
We study the infrared properties of the Si-SiO2 interface within a first-principles approach. In order to provide an atomic-scale description of the dielectric permittivity (both high-frequency and static) and of the infrared absorption at the interface, w ...