Nature of the Charge Carriers and Conduction Mechanism in Anatase TiO2

The anatase phase of TiO2 is a key material in the third generation of photovoltaics and for photo-catalytic devices. The number of promising applications, where one would profit from the electronic degrees of freedom of the material, like in memristors, spintronics, thermoelectrics etc., is constantly increasing. This vivid interest for anatase, beyond the traditionally used nanoparticle form, puts forward other structures like nanowires and thin films. Despite this progress in the demand and processing of anatase the description of the electronic properties is very limited. Few of the relevant questions are: what is the best way to engineer the band-gap; what is the character of the injected charge carriers; is there a polaron formation in this ionic material; what is the best way to stabilize a metallic state; can one observe superconductivity in TiO2 like in SrTiO3; how do the electronic properties evolve on going from bulk crystals, thin films, nanowires to nanoparticles? Bringing answer to some of these questions was the leitmotif of my PhD program. The principle quantities which I have investigated were the electrical transport coefficients: resistivity and thermoelectric power. Both quantities were measured in a broad temperature range (in some cases from 30 mK to 1000 K) and as a function of hydrostatic pressure (up to 4 GPa). With the progressive emergence of a physical model about this material in time, it was necessary to perform other measurements, to go beyond the expertise of our laboratory. I initiated and participated in optical and pumped-probe optical measurements and launched angle resolved photoemission spectroscopy (ARPES) studies. The major results are the following: 1. The easiest and almost inevitable doping of anatase is by oxygen vacancies. They create a low-lying donor level. The electrons are dressed by interactions with the lattice and upon thermal excitation into the conduction band they behave as large polarons. Their lifetime depends on the density of the vacancies. Besides high temperature heat treatment high energy photons (90 eV) can create these vacancies, as well. This offers the way of finely tuning the carrier density and to study polaron-polaron interactions. High pressure transport study confirms the polaronic character of the charge carriers and shows a non-monotonic pressure dependence of their mobility. 2. In Cr, N doped and Cr-N co-doped anatase thin films the dominant doping comes from oxygen vacancies. Surprisingly, with increasing dopant concentration the donor level - conduction band separation decreases considerably while the scattering rate goes up. These measuremnts call for an extreme care in the synthesis if one wants to have high quality films. 3. The best metallicity with doping is achieved in the case of Nb replacement of Ti. The 6% doping leads to 10−4 Ωcm resistivity at room temperature. A slight cation off-stoichiometry gives a weak but noticeable Kondo scattering at sub-Kelvin temperatures which might be at the origin of the absence of superconductivity. 4. In the case of an assembly of nanowires and nanoparticles the transport mechanism is suspected to be of hopping of charge carriers. However, the samples were too resistive to be measured at room temperatures with a d.c. method. Going to high temperatures the samples loose oxygen which precludes the precise measurement of the temperature dependence of the resistivity and the extraction of the hopping parameters. This extensive program of characterizing the electronic properties of anatase in all forms was possible due to the exceptional sample preparation expertise of our laboratory. Unique pristine and Cr, Co, Ir and Nd doped single crystals, nanowires and nanoparticles were prepared in-house; the thin films were provided by Dr. G. Eres (Oak Ridge national Laboratory) and by Prof. T. Hasegawa (Tokyo University) in the frame of a collaboration.

Pressure-tuned Transport Properties of Novel Iron-based Superconductors and Topological Insulators

Andrea Pisoni

The majority of interactions in solids strongly depend on the interatomic distances. The application of pressure changes the lattice parameters and modifies the electronic and the phononic energy spectra of a material avoiding some of the undesirable effects induced by chemical doping, like lattice disorder, impurity phases and phase separations. Layered materials are particularly affected by the application of pressure because their anisotropic structure eases the contraction of the lattice along specific crystallographic directions. In this thesis I study the effect of pressure on the transport properties of two new layered materials: L4Fe2As2Te(1-x)O4 (L = Pr, Sm, Gd) superconductors and beta-Bi4I4 topological insulator. The discovery of Fe-based superconductors (Fe-SCs) provided a new material base for studying the mechanism of high temperature superconductivity. These materials present unexpectedly high critical temperatures (Tc ) despite the presence of magnetic atoms. The parent compounds of Fe-SCs are semimetals with an antiferromagnetic ground state in which the itinerant electrons form a periodic modulation of spin density called spin density wave (SDW). By changing the structural properties or by adding/removing carriers the SDW order can be suppressed and superconductivity emerges. Our group recently succeeded in synthesizing a new family of Fe-SCs that presents Tc up to 45 K upon optimum chemical doping and substitution. I performed a systematic study of the upper critical field and the pressure-dependent electrical resistivity of single crystals of Pr4Fe2As2Te(1-x)O4 and Sm4Fe2As2Te(1-x)O(4-y)Fy . Hall coefficient and magnetoresistance of Pr4Fe2As2Te(1-x)O4 revealed electrons as the dominant type of charge carriers. The results can be successfully fitted by a two-band model that allows the estimation of the temperature dependent electron and hole densities and mobilities. In view of the exceptionally high structural anisotropy of this new class of Fe-SCs I investigated the electronic anisotropy of Sm4Fe2As2Te(1-x)O(4-y)Fy by means of microfabrication techniques. The results show a ratio between the out-of-plane and in-plane electrical resistivities that is the highest reported so far in Fe-SCs. Topological insulators (TIs) form another class of materials that is currently attracting a lot of attention both for fundamental physics and potential applications. In TIs metallic surface states coexist with an insulating bulk. Most of the TIs known so far are either three-dimensional strongly bonded bulk materials or layered van der Waals crystals. Beta-Bi4I4 is a material composed of quasi-one-dimensional molecular chains that was theoretically predicted, and only recently experimentally verified, to be a novel strong topological insulator. Due to its particular structure, beta-Bi4I4 offers the possibility to study the interplay between different ground states like topological insulating phase, charge-density-wave and superconductivity. Here I present, for the first time, a study of the thermoelectric properties of beta-Bi4I4 single crystals. Electrical resistivity, Seebeck coefficient, thermal conductivity and Hall coefficient measurements reveal a possible charge density-wave-order (CDW) at low temperature. According to resistivity and thermoelectric power measurements, pressure suppresses the CDW order. Resistivity measurements performed in a diamond anvil cell up to 20 GPa demonstrate that superconductivity is induced in beta-Bi4I4 for pressure above 10 GPa. Preliminary X-ray diffraction measurements by synchrotron radiation, performed on the sample recovered at ambient pressure after the experiment, reveal that a new Bi-I phase is formed at high pressure. The possibility that the topological insulator state could coexist with superconductivity in beta-Bi4I4 is certainly a fascinating option but it remains for now an open question.

EPFL2016

Properties of La2-xSrxCuO4 under epitaxial strain

Dominique Cloëtta

The subject of this thesis is the growth and analysis of high temperature superconductor (HTSC) films and the study of their electronic structure and properties. In particular, the effect of epitaxial strain is investigated, predominantly by means of in-situ angle resolved photoemission spectroscopy (ARPES), as well as X-ray diffraction, resistivity and susceptibility measurements. In order to achieve that goal we have developed a unique experimental set-up at the Synchrotron Radiation Center (University of Wisconsin), consisting in a dedicated pulsed laser deposition system, which enables us to grow thin films with excellent surface quality. Our sample transfer procedures assure that this surface quality is not affected on the way to the ARPES analyzer, which is connected to a beamline. We have built a similar film growth system at the EPFL with the aim to connect it to the SCIENTA analyzer at the IPN and to an analyzer on a beamline at the SLS in Villigen. For the first time we were able to perform ARPES measurements on in-situ grown films of HTSC. Previously to our work all the ARPES measurements were carried out on cleaved or scraped samples, predominantly single crystals of Bi2Sr2CaCu2O8 compounds. Thin films offer the possibility to study the effect of epitaxial strain induced through lattice mismatch between the film and its substrate. Compressive strain in the CuO2 plane has been known to enhance the critical temperature (TC) up to 50%, therefore we expected to see a signature of strain in the electronic dispersion. The Fermi surface of unstrained La2-xSrxCuO4 evolves with doping as reported for scraped single crystals, but also changes strongly with strain. Our studies show, that the in-plane compressive strain changes the Fermi surface topology from hole-like to electron-like. It enhances band dispersion and the Fermi level is crossed before the Brillouin zone boundary, in sharp contrast to the "usual" saddle point remaining ~30 meV below the Fermi level measured along the direction of the Cu-O bonds on unstrained samples. The associated reduction of the density of states near the Fermi level does not diminish the superconductivity; TC is enhanced in all our compressively strained samples. This result is rather surprising since such a reduction of the density of states, according to many mean field models, does not favor the increase of TC measured in our films. By comparing the ARPES measurements on our films with measurements on bulk crystals, we could also show that the results from our relaxed films are equivalent to those on bulk crystals, therefore excluding an explanation through finite size effects other than strain. Our latest results on films under huge tensile strain (1% change in c-axis) are significantly different: ARPES shows evidence for a 3-dimensional dispersion, in contrast with the strictly 2-dimensional dispersion observed on compressively strained films. Already the conduction band of relaxed La2-xSrxCuO4 is atypical: It has considerable apical-oxygen pz and Cu3dz2-r2 out-of-plane character, while for the rest of the cuprate HTSC, those orbitals hybridize far less with the conduction band. We relate the observed z-axis dispersion with the significant displacement of the apical-oxygen towards the CuO2 plane, induced by the epitaxial strain. Resistivity measurements show an insulating behavior of films under extreme tensile strain and no TC. Films with weaker tensile strain still exhibit superconductivity, but diminished as compared to the relaxed films. In summary, while the in-plane compressive strain tends to push the apical oxygen far away from the CuO2 plane, enhances the 2-dimensional character of the dispersion and increases TC, the tensile strain seems to act exactly in the opposite direction and the resulting dispersion is 3-dimensional. We have established the shape of the Fermi surface for both cases, yet further experiments are required to clarify fine details.

EPFL2005

Photoemission studies of thin films grown by pulsed laser deposition

Mike Abrecht

In this thesis I report on the unique novel possibilities offered by combining pulsed laser deposition (PLD) film growth of high temperature superconductors with angle integrated and angle resolved photoemission spectroscopy (PES and ARPES). The originality of the procedure rests on the in situ preparation and transfer of samples, hence by-passing the usual cumbersome cleaving or scraping practices to obtain high quality surfaces suitable for photoemission studies. Photoemission spectroscopy is one of the major experimental techniques to analyze the electronic structure that holds the key to understanding the properties of the high Tc cuprates (copper oxides) for which a complete microscopic theory still needs to materialize. In chapter 1, I introduce these complex copper oxide materials. The vast majority of ARPES measurements on the cuprate superconductors have so far been limited to the easily cleavable Bi2Sr2CaCu2O8+x (BSCCO-2212) single crystals. In chapter 2, I present the principle of an ARPES measurement, and show as an example (obtained in the "traditional way" of cleaving single crystals) a crossover in the electronic response at a special temperature T+>Tc in overdoped samples. In chapter 3, our unique laser ablation set-up, built on site at the Wisconsin Synchrotron Radiation Center (SRC), is introduced. This is followed by reports on film characterization such as transport, crystal and surface properties which enables the optimization of growth parameters. From here on to the end of the thesis, we show that instead of being a competing technique to cleaving samples, in situ growth of films appears to be a complementary one. In particular, our results show that preparing cuprates which contain oxygen chains, like Re-Ba2Cu3O6+x (RBCO-123; R=Y, Nd), for the surface sensitive ARPES measurements is very difficult due to a material intrinsic loss of oxygen near the surface. This, in turn, curbs the photoemission signal near the chemical potential due to the loss of superficial conductivity (chapter 3). Among the cuprates studied, La2-xSrxCuO4 (LSCO) and Bi2Sr2CaCu2O8+x films, however, both exhibit a sharp Fermi step in angle integrated photoemission spectra, indicating a conducting behavior at the surface. Moreover, thanks to using film samples, we were able to study ultra thin cuprates, down to about 1 unit cell (UC), and we were able to induce epitaxial strain in the samples which can remarkably enhance superconductivity. In chapter 4, combining core level, angle integrated valence band photoemission, and x-ray diffraction, we demonstrate that a structural phase transition occurs in the early growth of BSCCO-2212 films on SrTiO3 (STO) substrates, transforming the precursor Bi6O7 natural reactive buffer layer into the BSCCO-2212 structure. This is qualitatively different from the initial growth of YBCO-123 characterized by nucleation of well separated islands. Chapter 5 then presents the main success of our method: the first ever ARPES data on the low energy electronic structure of any high Tc superconductor under strain. In particular, we confirm that the Fermi surface (FS) of LSCO evolves with doping, but changes even more significantly with strain. More specifically, the FS becomes electron-like for in-plane compressed samples (for all doping values x studied, 0.1

EPFL2003