Dose dependence of luminescence increase in H2-loaded Bi-Al co-doped optical fibers by cw 244-nm and pulsed 193-nm laser irradiation
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The photosensitivity of germanium free Bi-Al-doped silica fibers with different bismuth concentrations was investigated using ArF excimer laser radiation at 193 nm and fiber grating formation. For the fiber with the highest bismuth concentration maximum re ...
Fibers doped with bismuth show broad luminescence bands around 750, 1100, and 1400 nm with spectral bandwidths of 100 to 200 nm at room temperature. The luminescence bands can be observed by pumping broad absorption bands in the visible or near infrared sp ...
We report an experimental investigation of the magnetic normal modes in large-area Ni80Fe20 antidot arrays fabricated on commercially available silicon substrates using deep ultraviolet lithography at 248 nm exposing wavelength. The effect of the lattice s ...
Institute of Electrical and Electronics Engineers2010
We present results of the optical characterization of silicon photonic crystal waveguides and microcavities that are completely buried in a silicon dioxide cladding and are fabricated by deep ultraviolet (UV) lithography. The advantages of buried waveguide ...
We report the demonstration of low order distributed feedback (DFB) optofluidic dye lasers with reduced threshold. The laser chips were realized in polydimethylsiloxane using replica molding with two masters. A comparison between first, second, and third o ...
We demonstrated a continuously tunable optofluidic distributed feedback (DFB) dye laser on a monolithic poly(dimethylsiloxane) (PDMS) elastomer chip. The optical feedback was provided by a phase-shifted higher order Bragg grating embedded in the liquid cor ...
Electron beams in modern linear accelerators are now becoming limited in brightness by the intrinsic emittance of the photocathode electron source. Therefore it becomes important for large scale facilities such as free electron lasers to reduce this fundam ...
We present all-optical tuning and switching of a microcavity inside a two-dimensional photonic crystal waveguide. The photonic crystal structure is fabricated in silicon-on-insulator using complementary metal-oxide semiconductor processing techniques based ...
ArF excimer laser irradiation of H2-loaded fibers increases the intensity of both the 1130 and 1390 nm fluorescence in Bi-Al-doped silica fiber by 18 dB and >16 dB. ...
Undoped fluoride glass slides have been exposed to pulsed 193-nm ultraviolet (UV) irradiation. Their absorption changes have been measured to evaluate UV-induced index changes using Kramers-Kronig relation. A layer-peeling polishing technique was applied t ...