Defect states characterization of non-annealed and annealed ZrO2/InAlN/GaN structures by capacitance measurements
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The present doctoral thesis aims to contribute to the field of organic semiconductor physics and technology, both of which have become fast growing disciplines. Two technological applications are emerging from these research efforts: Organic light-emitting ...
The electrical behavior of Au/SiOx/n-GaAs Schottky structures has been studied using a statistical approach. II has been concluded that the obtained unusual electrical behavior is connected mainly with different Fermi-level pinning position and lateral mic ...
Boltzmann electron energy distribution poses a fundamental limit to lowering the energy dissipation of conventional MOS devices, a minimum increase of the gate voltage, i.e. 60 mV, is required for a 10-fold increase in drain-to-source current at 300 K. Neg ...
The utilization of functional organic materials holds great promise for applications in electronic devices. Semiconducting organic molecules are frequently used as channel material in field effect transistors, due to the ease by which they can be assembled ...
The capability of switching the spontaneous polarisation under an applied electric field in ferroelectric materials can be exploited for the use in low power, non-volatile, re-writable memory devices. Currently available commercially is ferroelectric rando ...
This work experimentally demonstrates that the negative capacitance effect can be used to significantly improve the key figures of merit of tunnel field effect transistor (FET) switches. In the proposed approach, a matching condition is fulfilled between a ...