Design Methodologies and CAD for Emerging Nanotechnologies
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Field-enhanced sample stacking, field-enhanced sample injection as well as electrokinetic supercharging have been successfully integrated in carrier ampholyte-based capillary electrophoresis. Through the analysis of different test sample mixtures, it has b ...
Standard analog design procedure is usually based on a large number of simulations, strongly depends on the type of analog circuit that has to be implemented and requires a lot of manipulation at the transistor level. Simulators offer accurate modeling and ...
Recently, artificial intelligence (AI) systems gain an increasing popularity and their development is fast. One of the most important fields of the AI system development are artificial neural networks (ANN’s) which, due to continuous progress in microelect ...
Modern communication devices demand challenging specifications in terms of miniaturization, performance, power consumption and cost. Every new generation of radio frequency integrated circuits (RF-ICs) offer better functionality at reduced size, power cons ...
The aim of this research is to develop and to evaluate devices and circuits performances based on ultrathin nanograin polysilicon wire (polySiNW) dedicated to room temperature operated hybrid CMOS-"nano" integrated circuits. The proposed polySiNW device is ...
Wireless communication systems and handset devices are showing a rapid growth in consumer and military applications. Applications using wireless communication standards such as personal connectivity devices (Bluetooth), mobile systems (GSM, UMTS, WCDMA) an ...
Scaling of semiconductor devices has pushed CMOS devices close to fundamental limits. The remarkable success story of Moore's law during the last 40 years, predicting the evolution of electronic device performances related to miniaturization, has always be ...
Several alternative building blocks have been proposed to replace planar transistors, among which a prominent spot belongs to nanometric laments such as Silicon NanoWires (SiNWs) and Carbon NanoTubes (CNTs). However, chips leveraging these nanoscale struct ...
Latest fabrication technologies of self-assembly nano-circuits (carbon nanotubes, silicon nanowires, etc.) have deployed bottom-up techniques that reach feature sizes well below 65nm, holding great promise for future large silicon-based integrated circuits ...
We demonstrate high-performance nanowire superconducting single photon detectors (SSPDs) on bN thin films grown at a temperature compatible with monolithic integration. NbN films ranging from 150nm to 3nm in thickness were deposited by dc magnetron sputter ...
