We investigate the technological con-strains and design limitations of ultrathin body junctionless dou- ble gate MOSFET (JL DG MOSFET). Relationships between the silicon thickness and the doping concentration compatible with design requirements in terms of OFF-state-current and voltages are obtained and validated with TCAD simulations. This set of analytical expressions can be used as a guideline for technology optimization of JL DG MOSFETS.
Federico Alberto Alfredo Felici, Richard Pitts, Federico Pesamosca, Anna Ngoc Minh Trang Vu
Corentin Jean Dominique Fivet, Jan Friedrich Georg Brütting, Dario Redaelli, Alex-Manuel Muresan, Edisson Xavier Estrella Arcos