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Silicon oxide buffer layer at the p-i interface in amorphous and microcrystalline silicon solar cells

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Contact Design for Silicon Heterojunction Solar Cells

Luca Massimiliano Antognini

Today more than ever the world needs clean energy sources and thus a fast deployment and scaling up of the photovoltaic industry. In this context improving solar cell efficiency plays a major role. In order to achieve the maximum single junction efficiency ...

EPFL2022

Characterization and Development of Fired Passivating Contacts for Silicon Solar Cells

Mario Joe Lehmann

One of the key elements to improve mainstream crystalline silicon (c-Si) solar cell performance is surface passivation, which is at the center of the ongoing transition from cells with direct silicon-metal contacts to full area passivating contacts. In the ...

EPFL2022

SiNx and AlOx Nanolayers in Hole Selective Passivating Contacts for High Efficiency Silicon Solar Cells

Audrey Marie Isabelle Morisset, Xinya Niu

The recombination of photogenerated charge carriers at metal-semiconductor interfaces remains a major source of efficiency loss in photovoltaic cells. Here, we present SiNx and AlOx nanolayers as promising interface dielectrics to enable high efficiency ho ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Wireless optoelectronic devices are fabricated by controlling the porosity of p-type silicon, enabling in vivo efficient, non-genetic optoelectronic modulation of peripheral nerve activity. ...

NATURE PORTFOLIO2022

Evaluating Materials Design Parameters of Hole-Selective Contacts for Silicon Heterojunction Solar Cells

Christophe Ballif, Mathieu Gérard Boccard, Jan Haschke, Angela Nicole Fioretti, Rachel Emma Woods-Robinson

Silicon heterojunction (SHJ) solar cell efficiencies are limited by parasitic absorption from the hydrogenated amorphous silicon (a-Si:H) front contact, but this may be mitigated by selecting an alternative carrier selective contact material with a wider b ...

2020

Optimization of front SiNx/ITO stacks for high-efficiency two-side contacted c-Si solar cells with co-annealed front and rear passivating contacts

Christophe Ballif, Franz-Josef Haug, Xavier Niquille, Andrea Ingenito, Sylvain Nicolay, Frank Meyer

In this contribution, we present an electron selective passivating contact metallised with a low temperature process to target front side applications in crystalline silicon (c-Si) solar cells. In addition to an interfacial silicon oxide (SiOx) and an in-s ...

2020

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We demonstrate a broadband Silicon Photonic directional coupler that is entirely suspended in air. The device has been fabricated in a simplified Silicon Photonics process based on the standard IMEC ISIPP5OG platform, combined with custom post-processing i ...

IEEE2019

Full-Area Passivating Contacts with High and Low Thermal Budgets: Solutions for High Efficiency c-Si Solar Cells

Gizem Nogay

Today more than 90% of the global PV market is covered by c-Si solar cells which are limited by recombination losses at the metal-semiconductor interface. This recombination path can be avoided by separating the metal from the c-Si wafer by introducing a b ...

EPFL2018

In this thesis, we present the development and characterization of novel approaches to carrier-selective passivating contacts for crystalline silicon (c-Si) solar cells. In our first approach, we benefit from a wide-bandgap material, namely mixed-phase sil ...

EPFL2018

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Intrinsic amorphous silicon provides excellent surface passivation on crystalline silicon. It has previously been shown, that carriers that are photo generated in the amorphous silicon can be efficiently electronically injected into the crystalline silicon ...

IEEE2018