Publication

On thermal and radiation damage to silicon crystals in the LHC proton beam

Related publications (57)

Proton-Radiation Tolerance of Silicon and SU-8 as Structural Materials for High-Reliability MEMS

Herbert Shea, Antonia Neels, Alex Dommann, Tobias Bandi

The susceptibility of single-crystal silicon and SU-8 resonators to proton-radiation induced degradation was investigated. Both materials are in widespread use for microsystems structures, thus the stability of the mechanical properties must be ensured ove ...

Institute of Electrical and Electronics Engineers2013

Making MEMS more suited for Space: Assessing the proton-radiation tolerance of structural materials for microsystems in orbit

Herbert Shea, Antonia Neels, Alex Dommann, Tobias Bandi

We report on the susceptibility of structural MEMS materials to proton radiation damage. Radiation tests at spacerelevant doses were conducted on MEMS resonators. The two materials examined were single crystal silicon and SU-8, which are both in widespread ...

2013

Synthesis, crystal growth and physical properties of the frustrated spin ladder material BiCu2PO6

Shuang Wang

In recent years quantum antiferromagnets with an intrinsically disordered (“spin liquid”) ground state and an energy gap in the spin excitation spectrum have received a great deal of attention. In search for new experimental realizations of spin-ladder and ...

EPFL2013

Growth and Alignment of Thin Film Organic Single Crystals from Dewetting Patterns

Roland Hany, Jakob Heier, Gian-Luca Bona, Gaëtan Wicht, Raffaele Mezzenga, Thomas Geiger

Studying and understanding the conditions under which organic semiconductors can be engineered to form aligned single crystals in thin films is of primary importance owing to their unique orientation-dependent optoelectronic properties. Efforts to reach th ...

Amer Chemical Soc2013

Third-Order Susceptibility of Silicon Crystals Measured with Millimeter-Wave Gyrotron

Jean-Philippe Hogge, Markus Siegrist

We investigate experimental dependence of the third harmonic generation efficiency in the n-type Si crystals on the geometrical dimensions of the sample, polarization and power of the fundamental wave. The efficiency increases monotonically with the rise o ...

2011

Displacement damage effects in silicon MEMS at high proton doses

Herbert Shea, Joao Gomes Pereira Junior

We report on a study of the sensitivity of silicon MEMS to proton radiation and mitigation strategies. MEMS systems can degrade due to ionizing radiation (electron-hole pair creation) and non-ionizing radiation (displacement damage), such as electrons, tra ...

Spie-Int Soc Optical Engineering, Po Box 10, Bellingham, Wa 98227-0010 Usa2011

First results on the SPS beam collimation with bent crystals

Alessandro Masi, Valentina Previtali

Experiments were performed at the CERN SPS with 120 GeV/c stored proton beams to assess the possibility of beam halo collimation assisted by bent crystals. A bent crystal was used to deflect horizontally by an angle of about 170 mu rad the beam halo proton ...

Elsevier2010

Radiation protection studies for CERN Linac4/SPL accelerator complex

Egidio Mauro

CERN is presently designing a new chain of accelerators to replace the present Proton Synchrotron (PS) complex: a 160 MeV room-temperature H- linac (Linac4) to replace the present 50 MeV proton linac injector, a 3.5 GeV Superconducting Proton Linac (SPL) t ...

EPFL2009

First-principles study of defects at the SiC/SiO2 interface through hybrid functionals

Fabien Devynck

The requirements of present high-performance power electronic systems are exceeding the power density, efficiency, and reliability of silicon-based devices. Silicon carbide (SiC) is a candidate of choice for high-temperature, high-speed, high-frequency, an ...

EPFL2008

Crystalline silicon cantilevers for piezoresistive detection of biomolecular forces

Luis Guillermo Villanueva Torrijo

In order to obtain a sensor with force resolution better than 100 pN for biomolecular detection, U-shaped piezoresistive cantilevers made of crystalline silicon have been fabricated. The resistors have been defined by ionic implantation of As+, yielding a ...

Elsevier2008

Graph Chatbot

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.