Amorphous silicon oxide window layers for high-efficiency silicon heterojunction solar cells
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Zinc oxide (ZnO) is a material that belongs to the family of Transparent Conductives Oxides (TCO). Its non-toxicity and the abundant availability in the Earth's crust of its components make it an ideal candidate as electrical transparent contact for thin-f ...
We investigate amorphous silicon (a-Si:H) thin film solar cells in the n-i-p or substrate configuration that allows the use of nontransparent and flexible substrates such as metal or plastic foils such as polyethylene- naphtalate (PEN). A substrate texture ...
Hydrogenated microcrystalline silicon prepared at low temperatures by the glow discharge technique is examined here with respect to its role as a new thin-film photovoltaic absorber material. XRD and TEM characterizations reveal that microcrystalline silic ...
A description of ion transport through geometrically defined nanoslits is presented. It is characterized by the effective surface charge density and was obtained by impedance spectroscopy measurements of electrolytes with different physico-chemical propert ...
In microcrystalline hydrogenated silicon (μc-Si:H), the drift mobility dependencies of holes on electric field and temperature have been measured by using a method of equilibrium charge extraction by linearly increasing voltage. At room temperature the est ...
A combined thermal and simple kinetic model is applied to a small single solid oxide fuel cell (SOFC, 20 cm2 square cell of anode supported electrolyte with 1 cm2 active area). The aim was to compute the temperature field to analyze the operating condition ...
Temperature and electric field dependencies of mobility and concentration transients of electrons and holes using modified charge extraction by the linearly increasing voltage (CELIV) method in slightly doped n-type, p-type and undoped microcrystalline sil ...
This paper investigates the stability of dilution series of pin and nip microcrystalline silicon solar cells under low-energy proton irradiation (E = 405 keV). Variation of electrical parameters, defect-related absorption and Urbach parameter are investiga ...
An enhanced optical absorption, compared to crystalline silicon, was observed in the above gap region together with very low defect-connected absorption in microcrystalline silicon (μc-Si:H) prepared by very high frequency glow discharge technique at 70 MH ...