III-V nanowire arrays: growth and light interaction

Semiconductor nanowire arrays are reproducible and rational platforms for the realization of high performing designs of light emitting diodes and photovoltaic devices. In this paper we present an overview of the growth challenges of III-V nanowire arrays obtained by molecular beam epitaxy and the design of III-V nanowire arrays on silicon for solar cells. While InAs tends to grow in a relatively straightforward manner on patterned (111) Si substrates, GaAs nanowires remain more challenging; success depends on the cleaning steps, annealing procedure, pattern design and mask thickness. Nanowire arrays might also be used for next generation solar cells. We discuss the photonic effects derived from the vertical configuration of nanowires standing on a substrate and how these are beneficial for photovoltaics. Finally, due to the special interaction of light with standing nanowires we also show that the Raman scattering properties of standing nanowires are modified. This result is important for fundamental studies on the structural and functional properties of nanowires.

Functional properties of III-V nanowires addressed by Raman spectroscopy

Francesca Amaduzzi

In recent years, semiconductor nanowires have attracted considerable attention as a result of their unique properties and potential applications in many fields. In particular, they can be very attractive materials for certain optoelectronic and electronic devices, such as lasers, detectors and solar cells, which benefit from the photonic properties of nanowires. In order for these future technologies to become a reality, a good understanding of the functional properties of nanowires is fundamental. In this thesis we have investigated the optical and the electrical properties of III-V semiconductors nanowires by the means of Raman spectroscopy. Thanks to its non-destructive and spatial resolution, Raman spectroscopy is a powerful contact-less tool for the characterization of semiconductor nanowires. Raman spectroscopy can provide information about crystallinity, orientation, size and chemical composition. In polar semiconductors it is also possible to characterize the free carriers, through the coupling of plasmons with longitudinal optical modes. Due to the small size and particular morphology of nanowires, the interaction of light can be more complex than in thin films. In particular, the existence of photonic modes alters significantly the corresponding light-matter interaction. In this thesis we exploit the use of photonic modes for the compositional mapping of nanowire core-shell heterostructures and also to circumvent the macroscopic selection rules. In the first part of this thesis, we have performed Raman scattering measurements on GaAs/AlGaAs core/shell nanowires. We have shown that it is possible to select and characterize regions of the structure with different Aluminum content, by performing the measurements at different laser wavelengths. Then, we have shown that the photonic modes can be modified by suspending the nanowires on a trench. We have shown that in this case it is possible to enhance the response of the longitudinal optical phonon mode. We have then applied this configuration for the characterization of the hole concentration on p-type GaAs nanowires in back-scattering geometry. The second part of the thesis focused on the assessment of free carriers by Raman spectroscopy in systems with an expected high electron mobility: GaAs nanowires with a modulation doped structure and InAs(Sb) nanowires. Raman measurements were performed as a function of the temperature on modulation doped GaAs/AlGaAs nanowire. By characterizing the coupling between free carrier and the LO phonons, we have extracted the concentration and the mobility of carriers. We have found that Si donors are almost ionized for a temperature above 50 K. We have shown that the mobility is limited by interface scattering, with values of 400 cm^2/Vs at room temperature and 2700 cm^2/Vs at low temperature. Finally, we investigated the electronic properties of InAs(Sb) nanowires as a function of the temperature. The effect of a dielectric coating on the electronic properties was also studied. We have found an increase of mobility and electron concentration with the antimony content , moving from 5100 cm^2/Vs for InAs nanowires, to 17500 cm^2/Vs for InAsSb with 35% of antimony at 14K. Moreover, we have shown that in the case of InAs electrons are located in the accumulation layer at the surface, while for InAsSb our measurements are consistent with the carriers located in the nanowire core.

EPFL2017

III-Nitride Semiconductor Photonic Nanocavities on Silicon

Ian Michael Rousseau

Optical nanocavities enhance light-matter interaction due to their high quality factors (Q) and small modal volumes (V). The control of light-matter interaction lies at the heart of potential applications for integrated optical circuits, including optical communication, quantum computation, biophotonics, and optical projection. Many of these applications could benefit from wide band gap III-nitride semiconductor material, which already forms the basis of industrial lighting technology based on blue light-emitting diodes. Cleanroom fabrication and optical spectroscopy comprise the laboratory work in this thesis. Air-suspended III-nitride nanocavities are fabricated using electron beam lithography, reactive ion etching, and vapor phase etching from thin (< 300 nm) III-nitride epilayers grown on silicon (111) substrates by metal-organic vapor phase epitaxy. An embedded single InGaN/GaN quantum well serves as an internal light source during micro-photoluminescence experiments. Strain and heating effects are analyzed by micro-Raman spectroscopy. A dedicated quantum optics laboratory is constructed in order to study nanocavities and quantum emitters in III-nitrides at short wavelengths (lambda < 500 nm). Photonic crystal nanocavities exhibit the highest figure-of-merit for light-matter interaction enhancement, Q/V. However, in contrast to silicon and gallium arsenide nanocavities working at telecommunication wavelengths, III-nitride based nanocavities underperform theoretical Q estimates by nearly three orders of magnitude at short wavelengths (lambda = 430 - 500 nm). This thesis accounts for this discrepancy by combined experimental and theoretical studies of nanobeam fabrication statistics. Surface state absorption is found to be the primary factor limiting Q at short wavelengths. Surface effects are studied in the microdisk resonator geometry. UV photoinduced desorption of oxygen gas from the III-nitride surface redshifts and broadens whispering gallery mode resonances over minute timescales. Oxygen desorption incurs additional optical absorption losses up to 100 cm^{-1}. The redshift and broadening is nearly reversible upon the introduction of oxygen into the measurement environment, implicating oxygen in passivation of the III-nitride surface. Finally, optimized surface passivation techniques using rapid thermal processing and conformal chemical vapor deposition more than double state-of-the-art Q of GaN-based microdisk resonators to beyond Q=10,000 in the blue spectral range. The results demonstrate the capabilities and limitations of III-nitride materials for optical nanocavities and photonic integrated circuits at short wavelengths.

EPFL2018

Computational Modeling of Thin-Film Silicon Solar Cells and Modules

Thomas Andreas Lanz

Solar photovoltaic energy production relies on the direct conversion of sunlight into electricity. Silicon thin-film solar cells represent a reliable and environmentally friendly technology to make photovoltaics economically viable. As these solar cells do not contain any rare or toxic materials they are an ideal candidate for the large scale deployment of solar energy. At the same time photovoltaic energy production is ideal for off-grid, stand-alone installations. This thesis presents new methods and results on computational engineering of thin-film silicon solar cells and modules. Computational engineering employs numerical methods and simulation techniques to address engineering challenges. Predictive numerical simulations allow for device optimizations that otherwise require substantial experimental effort and they may lead to new insights into the device physics which is the basis for further improvements in terms of cell efficiency and lifetime. We discuss the development of two new simulation methods and present several case studies that illustrate their use in solar cell characterization and optimization. The first presented method addresses optical simulations, i.e. the interaction of the solar cell with sunlight. Our optical model is based on the net-radiation method that considers incoherent, ray-like propagation of light. We extend the net-radiation method with thin-film optics to allow for arbitrary sequences of thick and thin layers. Experimentally, advanced techniques such as optimized surface textures have been developed to increase the absorption in the solar cell and thereby to increase the produced current. We illustrate how our optical model takes into account these textures by means of azimuth integrated light scattering properties to formulate a computationally efficient model of light propagation within the solar cell. Our optical model thus integrates coherent and incoherent propagation of light as well as a non-iterative treatment of ligth scattering. It bridges the gap between wave and ray optics that alternative approaches are most often facing. We first apply the method to study a recently proposed rear electrode architecture based on lithium fluoride and aluminum in amorphous silicon solar cells. Our model-based optical analysis identifies the increased reflectivity of this back electrode as its main advantage. Secondly, we then explore the potential performance gains in microcrystalline silicon solar cells that can be reached by eliminating absorption in layers that do not contribute to the photogeneration of solar cell current. Finally, our optical model is also suited for other solar cell technologies and we illustrate its extension and application to light extraction calculations in light emitting diodes (LEDs). Our optical model has been incorporated into the software package setfos, commercialized by Fluxim Inc. It is thus available to the research community. We then turn to address large area solar modules. A new method based on the finite element method (FEM) is presented to calculate the electrical charge and heat transport in these devices and how it is influenced by defects as well as partial shading. We identify such defects with surface temperature measurements by means of lock-in thermography and demonstrate how our model accounts for the thermal signature of localized defects. Taking into account the large aspect ratio of thin-film solar modules we show how geometrical projections can be used to reduce the model complexity, leading to a numerically efficient approach based on the finite element method. We demonstrate this by presenting full current-voltage curves of solar modules under partial shading.

EPFL2013