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Defect levels at GaAs/Al2O3 interfaces: As-As dimer vs. Ga dangling bond

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Defect levels at GaAs/Al2O3 interfaces: As-As dimer vs. Ga dangling bond

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Alignment of defect levels and band edges through hybrid functionals: Effect of screening in the exchange term

Hybrid-functional calculations with plane-wave basis sets: Effect of singularity correction on total energies, energy eigenvalues, and defect energy levels

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