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Controlled growth of a line defect in graphene and implications for gate-tunable valley filtering

Related publications (35)

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Impact of He and Cr on defect accumulation in ion-irradiated ultrahigh-purity Fe(Cr) alloys

Robin Schäublin, Amuthan Ramar, Anna Prokhodtseva

The effect of He on the primary damage induced by irradiation in ultrahigh-purity (UHP) Fe and Fe(Cr) alloys was investigated by transmission electron microscopy (TEM). Materials were irradiated at room temperature in situ by TEM in a microscope coupled to ...

Pergamon-Elsevier Science Ltd2013

Charge transition levels of the As-As dimer defect at the InGaAs/Al2O3 interface are determined through density-functional calculations. At variance with the GaAs/Al2O3 interface where this defect gives rise to states within the band gap, its defect levels ...

Elsevier2013

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Roebel cables are one possible option for use in the manufacture of high current conductors for various technical applications. In this work the behaviour of critical current under transverse loads up to 90 MPa was studied in coated conductor Roebel cables ...

Iop Publishing Ltd2013

Breakdown of High-Performance Monolayer MoS2

Andras Kis, Dominik Sebastian Lembke

Two-dimensional (2D) materials such as monolayer molybdenum disulfide (MoS2) are extremely interesting for integration in nanoelectronic devices where they represent the ultimate limit of miniaturization in the vertical direction. Thanks to the presence of ...

Amer Chemical Soc2012

Defect levels of carbon-related defects at the SiC/SiO2 interface from hybrid functionals

Alfredo Pasquarello, Peter Broqvist, Audrius Alkauskas, Fabien Devynck

We investigate carbon single-atom and pair defects at the SiC/SiO2 interface as candidate defects for the density of defect states in the SiC band gap. In order to accurately describe the electronic defect levels with respect to the SiC band edges, we use ...

2011

Defects play a critical role in the dynamic fragmentation process of structural ceramics. Cracks initiate at seemingly random locations, propagate and coalesce to form fragments. The process is accompanied by stress release waves, whose influence is diffic ...

Elsevier2010

Effect of Stacking Order on the Electric-Field Induced Carrier Modulation in Graphene Bilayers

Klaus Kern, Marko Burghard, Kannan Balasubramanian, Eduardo Jian Hua Lee, Adarsh Singh Sagar

When planar graphene sheets are stacked on top of each other, the electronic structure of the system varies with the position of the subsequent sublattice atoms. Here, we employ scanning photocurrent microscopy to study the disparity in the behavior of cha ...

2009

1T Memory Cell Based on PVDF-TrFE Field Effect Transistor

Mihai Adrian Ionescu, Nava Setter, Igor Stolichnov, Didier Bouvet, Giovanni Antonio Salvatore, Sebastian Riester, Roman Gysel

Interest in PVDF-TrFE copolymers as ferroelectric material for Memory application is driven by the prospect of having low cost, low operating voltage and fully organic device. Some previous studies reported FET designs using copolymers [refs 1,2] but none ...

2008

Study of cascades damage in Ni by MD with different interatomic potentials

Zhongwen Yao

Molecular dynamics (MD) simulations, performed with embedded atom potentials, are used to understand the formation of defects following displacement cascades in Ni. Different empirical potentials, presenting large differences in stacking fault energy (SFE) ...

2007

Defect-induced magnetism in graphene

Lothar Helm, Oleg Yazyev

We study from first principles the magnetism in graphene induced by single carbon atom defects. For two types of defects considered in our study, the hydrogen chemisorption defect and the vacancy defect, the itinerant magnetism due to the defect-induced ex ...

2007