Publication

Scanning photocurrent microscopy reveals electron-hole asymmetry in ionic liquid-gated WS2 transistors

Related publications (46)

Graph Chatbot

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

Mobility engineering and a metal–insulator transition in monolayer MoS2

Andras Kis, Branimir Radisavljevic

Two-dimensional (2D) materials are a new class of materials with interesting physical properties and applications ranging from nanoelectronics to sensing and photonics. In addition to graphene, the most studied 2D material, monolayers of other layered mate ...

Nature Publishing Group2013

From All-Si Nanowire TFETs Towards III-V TFETs

Hesham Ghoneim

Performance improvement by device scaling has been the prevailing method in the semiconductor industry over the past four decades. However, current silicon transistor technology is approaching a fundamental limit where scaling does not improve device perfo ...

EPFL2012

Multi-gate Si nanowire MOSFETs

Mohammad Najmzadeh

Multi-gate devices e.g. gate-all-around (GAA) Si nanowires and FinFETs are promising can- didates for aggressive CMOS downscaling. Optimum subthreshold slope, immunity against short channel effect and optimized power consumption are the major benefits of s ...

EPFL2012

Field-Effect Transistors Based on ZnO Nanowires

Daniel Dominik Kälblein

Semiconductor nanowires are an emerging class of materials with great potential for applications in future electronic devices. The small footprint and the large charge-carrier mobilities of nanowires make them potentially useful for applications with high- ...

EPFL2011

In-IC Strategies for 3D Devices in Bulk Silicon

Matthieu Bopp

The increase of components density in advanced microelectronics is practically dictated by the device size and the achievable pitch between the devices. Scaling down dimensions of devices and progress in the circuit design allowed following Moore's law dur ...

EPFL2011

Self-Assembled Liquid-Gated Zinc Oxide Nanowire Transistors

Vivek Pachauri

This thesis aims at the site-specific realization of self-assembled field-effect transistors (FETs) based on semiconducting Zinc oxide NWs and their application towards chemical and bio-sensing in liquid medium. At first, a solution based growth method for ...

EPFL2011

Superconductor–insulator transition in La2 − xSrxCuO4 at the pair quantum resistance

Davor Pavuna, Guy Joseph Günter Dubuis, Ivan Bozovic

High-temperature superconductivity in copper oxides arises when a parent insulator compound is doped beyond some critical concentration; what exactly happens at this superconductor–insulator transition is a key open question1. The cleanest approach is to t ...

2011

Polarization Screening in Multiferroic (Ga,Mn)As/P(VDF-TrFE) Transistors

Nava Setter, Igor Stolichnov, Sebastian Riester, Evgeny Mikheev

Ferroelectric copolymers of polyvinylidene fluoride and trifluoroethylene are attractive gate materials because of a rather high remanent polarization, low dielectric permittivity, and easy integration on semiconductors due to the low processing temperatur ...

2011

Optical bistability in InGaN-based multisection laser diodes

Nicolas Grandjean, Jean-François Carlin, Julien Dorsaz, Dmitri Boiko, Luca Alex Milo Sulmoni

Optical bistability is observed in cw-operating InGaN-based laser diodes including a saturable absorber (SA) section. The dependence of the light-current hysteresis on the SA section length and reverse bias (VSA) has been studied. An analytical approach is ...

2011

Synthesis and characterization of group II-Vi semiconductor nanowires

Holger Jens Böttcher

Semiconductor nanowires are an emerging class of nanostructures that represent attractive building blocks for nanoscale electronic and photonic devices. To the present, nanowires are synthesized on a small scale by experimentally demanding gas phase deposi ...

EPFL2010