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Design and Implementation of CMOS Image Sensors for Biomedical Applications

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Performance and Transient Behavior of Vertically Integrated Thin-film Silicon Sensors

Christophe Ballif

Vertical integration of amorphous hydrogenated silicon diodes on CMOS readout chips offers several advantages compared to standard CMOS imagers in terms of sensitivity, dynamic range and dark current while at the same time introducing some undesired transi ...

2008

Single-photon image sensors in CMOS

Cristiano Niclass

Among advanced electronic designs, vision systems are perhaps those that have undergone the most dramatic technological revolutions of the last decades. Recently, a new family of vision systems has emerged aimed at three-dimensional (3D) imaging. Many appl ...

EPFL2008

Single-Photon Synchronous Detection

Edoardo Charbon, Ties Jan Henderikus Kluter, Cristiano Niclass, Claudio Favi, Frédéric Monnier

A novel imaging technique is proposed for fully digital detection of phase and intensity of light. A fully integrated camera implementing the new technique was fabricated in a 0.35μm CMOS technology. When coupled to a modulated light source, the camera can ...

2008

Features extraction for low-power face verification

Patrick Stadelmann

Mobile communication devices now available on the market, such as so-called smartphones, are far more advanced than the first cellular phones that became very popular one decade ago. In addition to their historical purpose, namely enabling wireless vocal c ...

University of Neuchâtel2008

Compact CMOS current conveyor for integrated NEMS resonators

Jürgen Brugger, Marc Antonius Friedrich van den Boogaart

A fully integrated nanoelectromechanical system (NEMS) resonator together with a compact built-in complementary metal-oxide-semiconductor (CMOS) interfacing circuitry is presented. The proposed low-power second generation current conveyor circuit allows me ...

2008

Optical sensor using a floating body SOI MOSFET in the Delta-sigma loop

Maher Kayal, Jean-Michel Sallese, Louis Harik

In this paper, the partially depleted SOI phototransistor has been used as a light intensity sensor. A pixel implementing the technique elaborated in [1] was designed and implemented on SOI technology. The circuit implements a first order Delta-sigma modul ...

2008

High Speed CMOS Imaging: Four Years Later

Edoardo Charbon

Four years ago [1] we assessed the status of CMOS imaging for high-speed applications. We also gave an outlook of the near future in high-speed imaging In this paper we revisit the topic of high speed imaging in a slightly different angle and make the poin ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2008

Delta-sigma loop based on charge pumping in SOI optical sensor

Maher Kayal, Jean-Michel Sallese, Louis Harik

2008

Making Background Subtraction Robust to Sudden Illumination Changes

Pascal Fua, Christoph Strecha, Julien Pilet

Modern background subtraction techniques can handle gradual illumination changes but can easily be confused by rapid ones. We propose a technique that overcomes this limitation by relying on a statistical model, not of the pixel intensities, but of the ill ...

Springer-Verlag New York, Ms Ingrid Cunningham, 175 Fifth Ave, New York, Ny 10010 Usa2008

Analog, Continuous Time, Fully Parallel, Programmable Image Processor Based on Vector Gilbert Multiplier

Rafal Tomasz Dlugosz

A conception as well as a CMOS implementation of the analog, ultra low power and fully parallel image processor have been presented in this paper. Proposed circuit bases on the 2-D FIR filters realized using the Gilbert vector multiplier. Proposed filter e ...

2007