Publication

A Schottky-Barrier Silicon FinFET with 6.0 mV/dec Subthreshold Slope over 5 Decades of Current

Related publications (32)

About
Privacy
Disclaimer

Graph Chatbot

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

A Schottky-Barrier Silicon FinFET with 6.0 mV/dec Subthreshold Slope over 5 Decades of Current

Graph Chatbot

Chat with Graph Search

Contact resistance effects in organic n-channel thin-film transistors

Sensing with Advanced Computing Technology: Fin Field-Effect Transistors with High-k Gate Stack on Bulk Silicon

Tunnel Field Effect Transistors

The top-down fabrication of a 3D-integrated, fully CMOS-compatible FET biosensor based on vertically stacked SiNWs and FinFETs

Advanced System on a Chip Design Based on Controllable-Polarity FETs (invited paper)

FinFET integrated low-power circuits for enhanced sensing applications

Design Methodologies and CAD for Emerging Nanotechnologies

High-k dielectric FinFETs towards Sensing Integrated Circuits

Single-layer MoS₂

Vertically-stacked gate-all-around polysilicon nanowire FETs with sub-μm gates patterned by nanostencil lithography