Low-temperature plasma-deposited silicon epitaxial films: Growth and properties
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A novel mechanical structure design with reduced deflection offset is reported. This design offers a batch processing solution to a well-known problem in the fabrication of very thin crystalline silicon structures, that is initial bending due to anchoring ...
A novel mechanical structure design with reduced deflection offset is reported. This design offers a batch processing solution to a well-known problem in the fabrication of very thin crystalline silicon structures, that is initial bending due to anchoring ...
Stencil lithography is an innovative method for patterning that has a great flexibility from many points of view. It is based on shadow mask evaporation using thin silicon nitride membranes that allow the patterning of sub-100 nm features up to 100 μm in a ...
Recent developments are going towards miniaturized devices and structures. Besides advanced photolithography techniques, complementary patterning methods are evolving. Among them is the nanostencil technique. Schematic overview of setup in operation: the s ...
During atomic layer deposition of high permittivity (high-k) metal oxide gate dielectrics, an interfacial layer (IL) containing SiOx between high-k dielectric and Si substrate is almost unavoidable. However, an Al(CH3)(3) (TMA) pretreatment for 3600 s on H ...
We report the observation of a characteristic incubation time in the growth of silicon nanowires using the vapor-liquid-solid growth mechanism. This incubation time manifests itself during the growth process as a characteristic time delay in the range of s ...
We have developed hybrid AFM probes with SU-8 polymer body and full platinum and tungsten cantilever and tip. The fabrication process uses surface micromachining of a (100) silicon wafer. The metal (platinum or tungsten) is sputter deposited in oxidation s ...
We report the observation of a characteristic incubation time in the growth of silicon nanowires using the vapor-liquid-solid growth mechanism. This incubation time manifests itself during the growth process as a characteristic time delay in the range of s ...
Zinc oxide (ZnO) is a material that belongs to the family of Transparent Conductives Oxides (TCO). Its non-toxicity and the abundant availability in the Earth's crust of its components make it an ideal candidate as electrical transparent contact for thin-f ...
Zinc oxide (ZnO) is now often used as a transparent conductive oxide for contacts in thin-film silicon solar cells. This paper presents a study of ZnO material deposited by the low-pressure chemical vapour deposition technique, in a pressure range below th ...