Structural peculiarities and aging effect in hydrogenated a-Si prepared by inductively coupled plasma assisted chemical vapor deposition technique
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structural defects induced by He implantation in GaN epilayer at high fluence (1 X 10(17) He/cm(2)) and elevated temperature (750 degrees C) have been studied by conventional and high resolution transmission electron microscopy. In addition to the planar i ...
The determination of the crystalline volume fraction from the Raman spectra of microcrystalline silicon involves the knowledge of a material parameter called the Raman emission cross-section ratio y. This value is still debated in the literature. In the pr ...
The structural characteristics of CdTe/CdS thin-film heterojunctions are investigated. The studied heterojunctions were obtained by successive thermal evaporation under vacuum onto unheated SnO2 coated glass substrates of CdS and CdTe films, respectively. ...
A description of ion transport through geometrically defined nanoslits is presented. It is characterized by the effective surface charge density and was obtained by impedance spectroscopy measurements of electrolytes with different physico-chemical propert ...
Fully epitaxial germanium-on-insulator structures have been grown for the first time on (001) Si substrates by using a perovskite oxide template. Detailed transmission electron microscopy analysis revealed that a two-temperature growth procedure is require ...
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In order to obtain a sensor with force resolution better than 100 pN for biomolecular detection, U-shaped piezoresistive cantilevers made of crystalline silicon have been fabricated. The resistors have been defined by ionic implantation of As+, yielding a ...
The understanding of material self-assembling and self-organization mechanisms, at mesoscale, is crucial for nanotechnologies development. Such structures, hierarchically organized in superlattices or colloïdal crystals, are observed in inorganic or organo ...
As screen printed contacts are the predominant metallisation technique in industrial production of Si solar cells, a better understanding of their properties is necessary. In this work, we show that high-quality cross-sectional samples can be prepared, who ...
During the last two decades, the Institute of Microtechnology (IMT) has contributed in two important fields to future thin-film silicon solar cell processing and design: (1) In 1987, IMT introduced the so-called "very high frequency glow discharge (VHF-GD) ...
When silicon thin films are deposited by plasma enhanced chemical vapor deposition in a plasma regime close to powder formation, a new type of material, consisting of an amorphous matrix in which silicon nanocrystallites are embedded is obtained. This mate ...