n(+)-GaN grown by ammonia molecular beam epitaxy: Application to regrown contacts
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Resonant-cavity InGaN/GaN quantum well light emitting diodes have been fabricated. Nitride layers were grown by molecular beam epitaxy on Si (111). We fabricated the structures using a combination of Si substrate etching, GaN etching and dielectric (Ta2O5/ ...
In the past decades, III-nitride semiconductor compounds have attracted an increasing amount of interest due to their applications to blue-violet laser diodes and white light emitting diodes, or for their use as ultraviolet emitting devices for biomedical ...
Gallium Nitride (GaN) and its ternary alloys with aluminium and indium have met a growing interest in the last decade. These semiconductors have a large direct bandgap and can be doped with either silicon (Si) for n-type and magnesium (Mg) for p-type layer ...
GaN epilayers and GaN/AlGaN quantum wells (QWs) were grown by molecular beam epitaxy on GaN(0001) single crystal substrates. Transmission electron microscopy (TEM) was used to assess the crystal quality of the homoepitaxial layers. A dislocation density of ...
Grown on a (111) high-resistivity silicon substrate, 0.1-mu m gate AlInN/GaN high-electron mobility transistors (HEMTs) achieve a maximum current density of 1.3 A/mm, an extrinsic transconductance of 330 mS/mm, and a peak current gain cutoff frequency as h ...
We report on the growth and properties of GaN films grown on Si(111) substrates by molecular beam epitaxy using ammonia. The properties of the layers show that our growth procedure is very efficient in order to overcome the difficulties encountered during ...
The a-Si:H / c-Si heterostructure, is an attractive solution to avoid the presence of highly recombinative metal contacts at the surfaces of c-Si based solar cells. To assure good interface passivation, insertion of a sandwiched thin device-grade intrinsic ...
GaN epilayers are grown on (111) oriented single crystal diamond substrate by ammonia-source molecular beam epitaxy. Each step of the growth is monitored in situ by reflection high energy electron diffraction. It is found that a two-dimensional epitaxial w ...
Stencil lithography is an innovative method for patterning that has a great flexibility from many points of view. It is based on shadow mask evaporation using thin silicon nitride membranes that allow the patterning of sub-100 nm features up to 100 μm in a ...
A bulk GaN half-wave (lambda /2) cavity is grown on Si(Ill) substrate by molecular beam epitaxy. It is embedded between twelve AlN/(Al,Ga)N quaterwave stacks and the silicon substrate, which acts as a metallic bottom mirror in the investigated wavelength r ...