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Single-Supply 3T Gain-Cell for Low-Voltage Low-Power Applications

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Multi-Ported GC-eDRAM Bitcell with Dynamic Port Configuration and Refresh Mechanism

Adam Shmuel Teman, Robert Giterman

Embedded memories occupy an increasingly dominant part of the area and power budgets of modern systems-on-chips (SoCs). Multi-ported embedded memories, commonly used by media SoCs and graphical processing units, occupy even more area and consume higher pow ...

MDPI2024

A 128-kbit GC-eDRAM With Negative Boosted Bootstrap Driver for 11.3x Lower-Refresh Frequency at a 2.5% Area Overhead in 28-nm FD-SOI

Andreas Peter Burg, Robert Giterman, Halil Andac Yigit, Emmanuel Nieto Casarrubias

Gain-cell embedded DRAM (GC-eDRAM) is a high-density logic-compatible alternative to conventional static random-access memory (SRAM) and embedded DRAM (eDRAM). However, GC-eDRAM suffers from a reduced data retention time (DRT) at deeply-scaled process node ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2023

Error Resilient In-Memory Computing Architecture for CNN Inference on the Edge

David Atienza Alonso, Giovanni Ansaloni, Alexandre Sébastien Julien Levisse, Marco Antonio Rios, Flavio Ponzina

The growing popularity of edge computing has fostered the development of diverse solutions to support Artificial Intelligence (AI) in energy-constrained devices. Nonetheless, comparatively few efforts have focused on the resiliency exhibited by AI workload ...

2022

Miss-Optimized Memory Systems: Turning Thousands of Outstanding Misses into Reuse Opportunities

Mikhail Asiatici

Even if Dennard scaling came to an end fifteen years ago, Moore's law kept fueling an exponential growth in compute performance through increased parallelization. However, the performance of memory and, in particular, Dynamic Random Access Memory (DRAM), ...

EPFL2021

Replica Bit-Line Technique for Internal Refresh in Logic-Compatible Gain-Cell Embedded DRAM

Robert Giterman, Odem Harel

Embedded memories, mostly implemented with static random access memory (SRAM), dominate the area and power of integrated circuits. Gain-cell embedded DRAM (GC-eDRAM) is an alternative to SRAM due to its high density, low power consumption, and two-ported f ...

ELSEVIER SCI LTD2020

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Among the different types of dynamic random-access memories (DRAMs), gain-cell embedded DRAM (GC-eDRAM) is a compact, low-power, and CMOS-compatible alternative to conventional static random-access memory (SRAM). GC-eDRAM achieves high memory density, as i ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

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The rise of data-intensive applications has resulted in an increasing demand for high-density and low-power on-chip embedded memories. Gain-cell embedded DRAM (GC-eDRAM) is a logic-compatible alternative to conventional static random access memory (SRAM) w ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

The rise of data-intensive applications has increased the demand for high-density and low-power embedded memories. Among them, the gain-cell embedded DRAM (GC-eDRAM) is a suitable alternative to the static random access memory (SRAM) due to its high memory ...

IEEE2019

Low-Power Design of Digital VLSI Circuits around the Point of First Failure

Andrea Bonetti

As an increase of intelligent and self-powered devices is forecasted for our future everyday life, the implementation of energy-autonomous devices that can wirelessly communicate data from sensors is crucial. Even though techniques such as voltage scaling ...

EPFL2019

A gain-cell embedded DRAM (GC-eDRAM) is an attractive logic-compatible alternative to the conventional static random access memory (SRAM) for the implementation of embedded memories, as it offers higher density, lower leakage, and two-ported operation. How ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2019