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94-GHz Large-Signal Operation of AlInN/GaN High-Electron-Mobility Transistors on Silicon With Regrown Ohmic Contacts

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94-GHz Large-Signal Operation of AlInN/GaN High-Electron-Mobility Transistors on Silicon With Regrown Ohmic Contacts

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A low-voltage CMOS-compatible time-domain photodetector, device & front end electronics

Leakage mechanisms and contact technologies in InAlN/GaN high electron mobility transistors

AlInN-Based HEMTs for Large-Signal Operation at 40 GHz

AlN-Capped AlInN/GaN High Electron Mobility Transistors with 4.5W/mm Output Power at 40 GHz

Fully Passivated AlInN/GaN HEMTs With f(T)/f(MAX) of 205/220 GHz

Ultrahigh-Speed AlInN/GaN High Electron Mobility Transistors Grown on (111) High-Resistivity Silicon with F-T=143 GHz

102-GHz AlInN/GaN HEMTs on Silicon With 2.5-W/mm Output Power at 10 GHz

A Widely-Tunable and Ultra-Low-Power MOSFET-C Filter Operating in Subthreshold

Flexible and Low Power Binary-Tree Current Mode Min/Max Nonlinear Filters Realized in CMOS Technology

Noise and small-signal modeling of nanoscale MOSFETs