Publication

Post-deposition treatment of microcrystalline silicon solar cells for improved performance on rough superstrates

Related publications (75)

Heterojunction solar cell efficiency improvement on various c-Si substrates by interface recombination modelling

High efficiency Si heterojunction (HJ) solar cells must exhibit low interface recombination, as it limits the cell open circuit voltage (VOC). The study of the interface recombination of various a-Si:H/c-Si lifetime test samples gives insight into the reco ...

2007

Plasma diagnostics as a tool for process optimization: the case of microcrystalline silicon deposition

Christoph Hollenstein, Alan Howling, Benjamin Strahm

Properties of thin films such as the crystallinity of silicon deposited from SiH4 - H-2 discharges are governed by the plasma composition. Therefore, it is crucial to measure the plasma composition in order to understand and optimize the deposition rate, d ...

2007

Rough ZnO Layers by LP-CVD Process and their Effect in Improving Performances of Amorphous and Microcrystalline Silicon Solar Cells

Arvind Shah, Sylvie Faÿ

Doped ZnO layers deposited by low-pressure chemical vapour deposition technique have been studied for their use as transparent contact layers for thin-film silicon solar cells. Surface roughness of these ZnO layers is related to their light-scattering capa ...

2006

Low pressure chemical vapour deposition of ZnO layers for thin-film solar cells: Temperature-induced morphological changes

Arvind Shah, Cédric Bucher, Sylvie Faÿ

Zinc oxide (ZnO) is now often used as a transparent conductive oxide for contacts in thin-film silicon solar cells. This paper presents a study of ZnO material deposited by the low-pressure chemical vapour deposition technique, in a pressure range below th ...

2005

Study of radio-frequency plasma deposition of amorphous silicon for the improvement of solar cell production

Juliette Ballutaud

Plasma enhanced chemical vapour deposition (PECVD) of thin films such as amorphous silicon has widespread applications especially in the field of photovoltaic solar cells and thin-film transistors for flat screen production. Industrial applications require ...

EPFL2004

High Efficiency p-i-n a-Si:H Solar Cells with Low Boron Cross-Contamination Prepared in a Large Area Single-Chamber PECVD Reactor

Christoph Hollenstein, Arvind Shah, Alan Howling, Cédric Bucher, Juliette Ballutaud, Stefano Benagli

In this work, a new type of short water vapor treatment of the interface between the p- and i-layer is presented. This novel treatment is performed under vacuum below 1 mbar for 5 min and considerably reduces the i-layer boron contamination in amorphous si ...

2004

L'oxyde de zinc par dépôt chimique en phase vapeur comme contact électrique transparent et diffuseur de lumière pour les cellules solaires

Sylvie Faÿ

Zinc oxide (ZnO) is a material that belongs to the family of Transparent Conductives Oxides (TCO). Its non-toxicity and the abundant availability in the Earth's crust of its components make it an ideal candidate as electrical transparent contact for thin-f ...

EPFL2003

Material and Solar Cell Research in Microcrystalline Silicon

Arvind Shah

This contribution describes the introduction of hydrogenated microcrystalline silicon (μc-Si:H) as novel absorber material for thin-film silicon solar cells. Work done at IMT Neuchâtel in connection with deposition of μc-Si:H layers by very high frequency ...

2003

Microstructure and Open-Circuit Voltage of n-i-p Microcrystalline Silicon Solar Cells

Arvind Shah, Julien Claude Bailat

The microstructure and open-circuit voltage of n-i-p microcrystalline silicon solar cells were discussed. A mixed phase layer consisting of amorphous plus microcrystalline material was observed at the bottom of the solar cell and identified as one of the k ...

2003

Role of i layer deposition parameters on the V0c and FF of an a-Si:H solar cell deposited by PECVD at 27.13 MHz

Arvind Shah, Cédric Bucher, Juliette Ballutaud, Stefano Benagli

A study of the i-layer porosity as a function of the deposition parameters by PECVD technique, is presented here. It is demonstrated in particular, that for a fixed deposition rate of 2 Å/s, increasing the plasma power tends to increase the layer density, ...

2003

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