Effect of Magnetic Ion Doping on Structural, Electric and Relaxor Properties of Pb (Fe2/3W1/3) O-3 Multiferroic Ceramics
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Systems with a ferroelectric to paraelectric transition in the vicinity of room temperature are useful for devices. Adjusting the ferroelectric transition temperature (T-c) is traditionally accomplished by chemical substitution - as in BaxSr1-xTiO3, the ma ...
In ferroelectric materials, domain wall displacement plays a key role in the dielectric properties measured with respect to the driving field amplitude and frequency. The low to medium field dielectric response in many ferroic systems can be often describe ...
Relaxor Pb(Mg1/3Nb2/3)O3(PMN) and its solid solutions with ferroelectric PbTiO3 (PT) are of considerable interest from both the applications and the scientific point of view. In the past, many attempts were made to prepare and study the properties of these ...
Strontium Bismuth Titanate is a very promising material for high temperature piezoelectric applications, its elevated ferroelectric phase transition (530°C), linear piezoelectric properties under low field and relatively low room temperature conductivity ( ...
The impact of electrode-adjacent passive layers on the small signal dielectric response of a ferroelectric film containing a 180degrees-domain pattern has been analyzed. It is shown that, for a realistic physical situation, the so-called "in-series capacit ...
The influence of addition of a low-loss linear dielectric material to a tunable ferroelectric material has been investigated in terms of the electrostatic consideration. The calculations of the dielectric loss and dielectric non-linearity of ferroelectric- ...
The non-linear dielectric properties of single crystals of PbMg1/3Nb2/3O3 relaxer ferroelectric were investigated experimentally by using measurements of the dielectric permittivity of this material as a function of the DC bias and the AC driving fields. T ...
Pb(Mg1/3Nb2/3)O-3 thin films were prepared from modified alkoxide solution precursors and their dielectric and electromechanical characteristics were investigated. Preparation of the films is very sensitive to processing parameters. The influence of differ ...
It is shown that the effects of large de bias and ac driving fields on the dielectric permittivity of single crystals of PbMg1/3Nb2/3O3 (PMN) relaxer ferroelectric exhibit very different behavior, including anisotropy and sign of the effect, which is trace ...
Through the use of relations analogous to that of the Rayleigh law, it is demonstrated that the ac electric field dependence of the permittivity of ferroelectric thin films can be described. It is further shown that both reversible and irreversible compone ...