Detection of a single magnetic microbead using a miniaturized silicon Hall sensor
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A 3D vertically stacked silicon nanowire (SiNW) and Fin field effect transistor (FET) featuring a high density array (7 or 8 x 20 SiNWs, > 4 Fins vertically stacked) of fully depleted, ultra-thin (SiNWs diameters similar to 15-30 nm, Fin width/height fw si ...
Organic thin-film transistors (TFTs) are of interest for applications that require electronic functionality with low or medium complexity distributed over large areas on unconventional substrates, such as flexible polymeric films. Generally these are appli ...
Over the recent decades, the balance between increasing the complexity of computer chips and simultaneously reducing cost per bit has been accommodated by down-scaling. While extremely successful in the past, this approach now faces grave limitations leadi ...
Capacitive measurement of very small displacement of nano-electro-mechanical systems (NEMS) presents some issues that are discussed in this article. It is shown that performance is fairly improved when integrating on a same die the NEMS and CMOS electronic ...
Institute of Electrical and Electronics Engineers2009
Silicon technology has advanced at exponential rates both in performances and productivity through the past four decades. However the limit of CMOS technology seems to be closer and closer and in the future we might see an increasing number of hybrid appro ...
Wafer-scale nanostencil lithography (nSL) is used to define several types of silicon mechanical resonators, whose dimensions range from 20 μm down to 200 nm, monolithically integrated with CMOS circuits. We demonstrate the simultaneous patterning by nSL of ...
For the past couple of decades the desire to add more complexity to a computer chip, while simultaneously reducing the cost per bit, has been accommodated by down-scaling. This approach has been extremely successful in the past, but like all good things it ...
A fully integrated nanoelectromechanical system (NEMS) resonator together with a compact built-in complementary metal-oxide-semiconductor (CMOS) interfacing circuitry is presented. The proposed low-power second generation current conveyor circuit allows me ...
Since the advent of CMOS technology, the semiconductor industry has been successful in achieving continuously improved performance. The feature size of the most important electronic device, the Metal Oxide Semiconductor Field Effect Transistor (MOSFET), ha ...
This paper addresses the challenges and opportunities offered by post-CMOS devices in terms of new functionality and ultra low power. It focuses on the illustration of: (i) the quest for the new electronic abrupt switches (tunnel-FET and IMOS/PIMOS) and (i ...
Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2008
