Low-noise magnetic-flux sensors based on the extraordinary magnetoresistance effect
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Semiconductor–metal hybrid structures can exhibit a very large geometrical magnetoresistance effect, the so-called extraordinary magnetoresistance (EMR) effect. In this paper, we analyze this effect by means of a model based on the finite element method an ...
We present a study based on simulations describing how shot noise, an intrinsic part of the recording process with a digital camera, influences the quality of the reconstructed phase images under different beams intensities configurations. ...
We report on a high-sensitive SQUID-susceptometer for magnetization studies on two-dimensional electron systems (2DES). It consists of a low-noise thin-film dc SQUID and a wire-wound first-order gradiometer and is operated inside a superconducting 10 T-mag ...
An electronic compass made of a new planar 2D micro-fluxgate sensor is presented. The magnetometer is integrated in a standard CMOS process, and uses a post-processed cross-shaped ferromagnetic amorphous core. This core is diagonally placed above a single ...
We present a new two-axis fluxgate magnetometer fully integrated in CMOS technology. The magnetometer exhibits excellent sensitivity of 2700 V/T and the magnetic equivalent noise spectral density of 6nT/√Hz at 1 Hz. The total power consumption is as low as ...
A new fuzzy filter is presented for the noise reduction of images corrupted with additive noise. The filter consists of two stages. The first stage computes a fuzzy derivative for eight different directions. The second stage uses these fuzzy derivatives to ...
An electronic compass made of a new planar 2D micro-fluxgate sensor is presented. The magnetometer is integrated in a standard CMOS process, and uses a post-processed cross shape ferromagnetic amorphous core. This core is diagonally placed above a single s ...
We report on magnetotransport experiments performed at 4.2 K on hybrid structures consisting of a metal and a mesoscopic two-dimensional electron system in an InAs/InGaAs heterostructure. The devices were fabricated using cleaved-edge overgrowth. We find t ...