Publications related to Oscillatory Spin-Filtering due to Gate Control of Spin-Dependent Interface Conductance

More Results on Shortest Linear Programs

At the FSE conference of ToSC 2018, Kranz et al. presented their results on shortest linear programs for the linear layers of several well known block ciphers in literature. Shortest linear programs are essentially the minimum number of 2-input xor gates r ...

2019

Exploration of Negative Capacitance Devices and Technologies

Ali Saeidi

Conventional device scaling has been the main guiding principle of the MOS device engineering over these past years. However, this aggressive scaling would be eventually limited due to the inability to remove the heat generated by MOSFET devices. The power ...

EPFL2019

Strong paramagnon scattering in single atom Pd contacts

Klaus Kern, Markus Ternes, Uta Schlickum, Peter Wahl, Ivan Pentegov, Verena Katharina Schendel

Among all transition metals, palladium (Pd) has the highest density of states at the Fermi energy at low temperatures yet does not fulfill the Stoner criterion for ferromagnetism. However, close proximity to magnetism renders it a nearly ferromagnetic meta ...

Amer Physical Soc2017

Synthesis and Physical Properties of 3d, 4d and 5d Transition Metal Compounds

Lin Yang

In this thesis I study the synthesis and basic physical properties characterization on 3

d

, 4

d

and 5

d

transition metal compounds. Great success has been obtained in 3

d

transition metal compounds, in which the electric states are well localized due t ...

EPFL2017

Complexity of reversible circuits and their quantum implementations

Mathias Soeken, Nabila Abdessaied

We provide an extensive overview of upper bounds on the number of gates needed in reversible and quantum circuits. As reversible gate libraries we consider single-target gates, mixed-polarity multiple-controlled Toffoli gates, and the set consisting of the ...

2016

Computationally Efficient Multiple-Independent-Gate Device Model

Giovanni De Micheli, Mariagrazia Graziano, Pierre-Emmanuel Julien Marc Gaillardon, Gianluca Piccinini

Nanowire Field Effect Transistors (FETs) with multiple independent gates around a silicon channel feature ultimate gate control and are regarded as promising candidates for next generation transistors. Being inherently more complex than conventional gate-a ...

Institute of Electrical and Electronics Engineers2016

Technology mapping of reversible circuits to Clifford+T quantum circuits

Mathias Soeken, Nabila Abdessaied

The Clifford+T quantum gate library has attracted much interest in the design of quantum circuits, particularly since the contained operations can be implemented in a fault-tolerant manner. Since fault tolerant implementations of the T gate have very high ...

IEEE2016

New Data Structures and Algorithms for Logic Synthesis and Verification

Luca Gaetano Amarù

The strong interaction between Electronic Design Automation (EDA) tools and Complementary Metal-Oxide Semiconductor (CMOS) technology contributed substantially to the advancement of modern digital electronics. The continuous downscaling of CMOS Field Effec ...

EPFL2015

Towards room-temperature deterministic ferroelectric control of ferromagnetic thin films

Zhen Huang

The persisting demand of higher computing power and faster information processing keeps pushing scientists and engineers to explore novel materials and device structures. Within emerging functional materials, there is a focus on multiferroics materials and ...

EPFL2015

Role of the gate in ballistic nanowire SOI MOSFETs

Christian Enz, Jean-Michel Sallese, Anurag Mangla

In this paper we report the results of Monte-Carlo simulations performed on double-gate ballistic MOSFETs with a geometry such that the gates overlap only a fraction of the channel. We present a qualitative analysis of the simulation results highlighting t ...

Elsevier2015

Oscillatory Spin-Filtering due to Gate Control of Spin-Dependent Interface Conductance

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More Results on Shortest Linear Programs

Exploration of Negative Capacitance Devices and Technologies

Strong paramagnon scattering in single atom Pd contacts

Synthesis and Physical Properties of 3d, 4d and 5d Transition Metal Compounds

Complexity of reversible circuits and their quantum implementations

Computationally Efficient Multiple-Independent-Gate Device Model

Technology mapping of reversible circuits to Clifford+T quantum circuits

New Data Structures and Algorithms for Logic Synthesis and Verification

Towards room-temperature deterministic ferroelectric control of ferromagnetic thin films

Role of the gate in ballistic nanowire SOI MOSFETs

Strong paramagnon scattering in single atom Pd contacts

Technology mapping of reversible circuits to Clifford+T quantum circuits

Exploration of Negative Capacitance Devices and Technologies

New Data Structures and Algorithms for Logic Synthesis and Verification

Computationally Efficient Multiple-Independent-Gate Device Model

More Results on Shortest Linear Programs

Towards room-temperature deterministic ferroelectric control of ferromagnetic thin films

Role of the gate in ballistic nanowire SOI MOSFETs

Complexity of reversible circuits and their quantum implementations

Synthesis and Physical Properties of 3d, 4d and 5d Transition Metal Compounds