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In this paper we report the results of Monte-Carlo simulations performed on double-gate ballistic MOSFETs with a geometry such that the gates overlap only a fraction of the channel. We present a qualitative analysis of the simulation results highlighting the similarities and differences between ballistic devices of 10 nm and 100 nm channel length, in an attempt to understand the electrostatics in a ballistic channel, especially the influence of the gate, source and drain terminals on the channel. (C) 2015 Elsevier Ltd. All rights reserved.
Elison de Nazareth Matioli, Jun Ma, Luca Nela, Minghua Zhu
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