Hybrid ferromagnet/semiconductor nanostructures: spin-valve effect and extraordinary magnetoresistance
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In this work, we present a correlation between the morphological characterization of InyAl1−yAs/InxGa1−xAsheterostructures grown on InP substrates for high electron mobility transistors(HEMTs) applications as determined by transmission electron microscopy, ...
The utilization of functional organic materials holds great promise for applications in electronic devices. Semiconducting organic molecules are frequently used as channel material in field effect transistors, due to the ease by which they can be assembled ...
The present doctoral thesis aims to contribute to the field of organic semiconductor physics and technology, both of which have become fast growing disciplines. Two technological applications are emerging from these research efforts: Organic light-emitting ...
InAlAs/InGaAs/InP based high electron mobility transistor devices have been structurally and electrically characterized, using transmission electron microscopy and Raman spectroscopy and measuring Hall mobilities. The InGaAs lattice matched channels, with ...
In this thesis we study the electronic structure of different two-dimensional (2D) electron systems with angular resolved photoemission spectroscopy (ARPES). This technique is based on the photoelectric effect and directly probes the electronic structure o ...
We have fabricated hybrid structures consisting of a metallic thin film and of a microstructured two-dimensional electron system in an InAsheterostructure. The devices are found to exhibit a huge magnetoresistance(MR)effect in magnetic fields ⩽1 T . At low ...
The goal of this thesis is to contribute to the understanding of charge transport in organic field-effect transistors (OFETs) made of pentacene. Organic thin-film transistors (OTFTs) with active layers thicknesses of 5, 10, 20, and 100 nm were fabricated i ...
In this study we used transmission electron microscopy (TEM) to assess the origin of the electrical behaviour of two dimensional electron gas (2DEG) in high electron mobility transistors (HEMTs) based upon InAlAs/InGaAs heterostructures grown on InP substr ...
The concept of a field-effect transistor with ferroelectric gate has been implemented using the GaN/AlGaN heterostructure combined with Pb(Zr,Ti)O-3 ferroelectric layer. The processing conditions were optimized in a way to obtain textured Pb(Zr,Ti)O-3 film ...
It is observed experimentally that high electron mobility transistor devices with short channel length processed from nitride AlInN/AlN/GaN heterostructures containing 2D electron gases (2DEGs) with densities beyond 2 x 10(13) cm(-2) exhibit temperatures u ...