Metal diamond composites: Challenges in interface design
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The Thermal Boundary Conductance (TBC) at the interface between metals and dielectrics is of key importance for heat transport in structures heterogeneous on a scale from 100 µm downwards. In this thesis the TBC of a large number of metal/dielectric couple ...
The thermal boundary conductance (TBC) of metal/dielectric couples was measured for a large variety of metals on silicon, sapphire, and diamond using time domain thermoreflectance and compared to data previously obtained on diamond. In the case of silicon, ...
Open-pore aluminium foams are of interest in thermal management of power electronics due to their large specific surface area, low weight and relatively high thermal conductivity. The replication process is a low-cost and simple foam manufacturing method t ...
Silicon carbide based composites are candidates for structural components and fuel claddings in nuclear power plants. In the frame of accident tolerant fuel research, the effective through-thickness thermal conductivity of SiC/SiC prototype claddings is in ...
Radiative-conductive heat transfer in porous media is usually investigated by decoupling the heat transfer modes and solving the volume-averaged continuum equations using effective transport properties. However, both modes are naturally coupled and couplin ...
Synchronized thermal and visual investigation was carried out on a single-turn channel CLPHP using R245fa as the worldng fluid. The tests were carried out at filling ratios from 10 to 90% and heat inputs from 2 to 60 W for vertical and inclined orientation ...
The aim of the work is to study interface formation between Al2O3 particles and Al(Ca) matrix in dependence of Ca content. Aluminium matrix composites (AMC) subjected to investigation were prepared by gas pressure assisted infiltration of alumina beds with ...
The effect of an Al2O3 interlayer on the thermal conductance of metal (Al)/non-metal (diamond and silicon) interfaces is investigated using Time Domain ThermoReflectance (TDTR). Interlayers between 1.7 and 20nm are deposited on oxygen-terminated diamond an ...
In many semiconductor technologies, including GaN, the lack of p-channel devices is a major obstacle for complementary operations. Here, we demonstrate high-performance polycrystalline diamond p-channel transistors on GaN-on-Si. Following the optimization ...
The effect of oxygen termination of diamond surfaces on the interface thermal conductance between Ag–3Si and diamonds is investigated in dependence of temperature by measuring thermal conductivity in the temperature range from 4 K up to ambient. Composites ...