Reduction of the effects of InGaAs alloy disorder by using superlattices as the conduction channel in modulation-doped heterostructures
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We studied the electrical properties, the Hall mobility and the free carrier concentration of modulation-doped field-effect transitor heterostructures using M(InAs)mN(GaAs)m short-period superlattice (SPS) channels. We changed the number of monolayers m fo ...
The molecular-beam epitaxial growth conditions of (N + 1)(InAs)m/N(GaAs)n short period superlattices (SPSs) on GaAs substrates have been optimized. Hall electrical properties measured by the van der Pauw method were compared to low-temperature photolumines ...
We studied the influence of the indium composition y, growth temperature T(s) and InGaAs quantum-well channel thickness d(ch) on the 300 and 77 K Hall electrical properties of pseudomorphic modulation doped field effect transistor (MODFET)-type heterostruc ...
Low-frequency noise measurements have been performed in the linear range of the I-V characteristics of pseudomorphic Al0.3Ga0.7As/In0.25Ga0.75As/GaAs high electron mobility transistors (HEMTs) grown by molecular beam epitaxy with different channel thicknes ...
