Publication
Low-frequency drain-current noise in pseudomorphic InAlAs/InGaAs/InP HEMTs has been studied at low drain bias as a function of the InGaAs pseudomorphic channel thickness. The 1/f noise at 77 K, quantified through the Kooge's empirical parameter alpha(ch), was found to be strongly dependent on the 2DEG concentration n(s) and correlated to the reciprocal mobility 1/mu. alpha(ch) was found to strongly increase at high channel thicknesses. Noise spectra analysis as a function of temperature reveals two traps with activation energies of 0.33 and 0.39 eV.
Luc Thévenaz, Malak Mohamed Hossameldeen Omar Mohamed Galal, Yuting Yang, Li Zhang, Suneetha Sebastian
Mihai Adrian Ionescu, Junrui Zhang, Francesco Bellando, Pierpaolo Palestri, Luca Selmi