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A semiconductor device, such as a memory device or radiation detector, is disclosed, in which data storage cells are formed on a substrate. Each of the data storage cells includes a field effect transistor having a source, drain, and gate, and a body arran ...
A semiconductor device such as a DRAM memory device is disclosed. A substrate 12 of semiconductor material is provided with energy band modifying means in the form of a box region 38 and is covered by an insulating layer 14. A semiconductor layer 16 has so ...
Data storage cells are formed on a substrate (13). Each of the data storage cells includes a field effect transistor with a source (18), drain (22) and gate (28) and a body arranged between the source and drain for storing electrical charge generated in th ...
Data storage cells are formed on a substrate (13). Each of the data storage cells includes a field effect transistor with a source (18), drain (22) and gate (28) and a body arranged between the source and drain for storing electrical charge generated in th ...
Microcavity comprising two reflectors, at least one semiconductor layer separating said reflectors and a semiconductor quantum well wherein at least one of said reflectors and of said at least one semiconductor layer comprises a structure which is adjusted ...
The objective of this paper is to present the fundamental phenomena occurring during the scribing and subsequent fracturing process usually performed when preparing surfaces of brittle semiconductors. In the first part, an overview of nano-scratching exper ...
Data storage cells are formed on a substrate (13). Each of the data storage cells includes a field effect transistor with a source (18), drain (22) and gate (28) and a body arranged between the source and drain for storing electrical charge generated in th ...
The device has a semiconductor layer provided on an insulating layer and including source and drain (18,20) regions to define a body (22) region of respective field effect transistors. An energy band modifying unit modifies the valence and conduction band ...
Photoelectric conversion device (1) comprising semiconductor electrode (15) having semiconductor layer (7) carrying a sensitizing dye, counter electrode (9) arranged opposite to the semiconductor electrode (15) and electrolyte layer (13) arranged between t ...
Nucleation and growth models are well developed for nucleation on homogeneous substrates, and they can typically be described-in terms of three energy parameters. Nucleation on substrates containing point-defect traps has been investigated, at the cost of ...
