InGaN based micro light emitting diodes featuring a buried GaN tunnel junction
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GaN based LEDs are grown on sapphire by MBE using NH3. The n- and p-type doping levels are 4x10(18) and 3x10(17) cm(-3), respectively. LEDs turn on at 3V, and the forward voltage is 3.7V at 20mA. The electroluminescence peaks at 390 nm. ...
The growth of GaN layers was carried out on c-plane sapphire substrates by molecular beam epitaxy (MBE) using NH3. Undoped GaN layers were grown at 830 degrees C with growth rates larger than 1 mu m/h. Optical properties are characteristics of high quality ...
Junctions between n-type semiconductors of different electron affinity show rectification if the junction is abrupt enough. With the advent of 2D materials, we are able to realize thin van der Waals (vdW) heterostructures based on a large diversity of ma ...
