Contact resistanceThe term contact resistance refers to the contribution to the total resistance of a system which can be attributed to the contacting interfaces of electrical leads and connections as opposed to the intrinsic resistance. This effect is described by the term electrical contact resistance (ECR) and arises as the result of the limited areas of true contact at an interface and the presence of resistive surface films or oxide layers. ECR may vary with time, most often decreasing, in a process known as resistance creep.
Quantum efficiencyThe term quantum efficiency (QE) may apply to incident photon to converted electron (IPCE) ratio of a photosensitive device, or it may refer to the TMR effect of a Magnetic Tunnel Junction. This article deals with the term as a measurement of a device's electrical sensitivity to light. In a charge-coupled device (CCD) or other photodetector, it is the ratio between the number of charge carriers collected at either terminal and the number of photons hitting the device's photoreactive surface.
P–n junctionA p–n junction is a boundary or interface between two types of semiconductor materials, p-type and n-type, inside a single crystal of semiconductor. The "p" (positive) side contains an excess of holes, while the "n" (negative) side contains an excess of electrons in the outer shells of the electrically neutral atoms there. This allows electric current to pass through the junction only in one direction.
LaserA laser is a device that emits light through a process of optical amplification based on the stimulated emission of electromagnetic radiation. The word laser is an anacronym that originated as an acronym for light amplification by stimulated emission of radiation. The first laser was built in 1960 by Theodore Maiman at Hughes Research Laboratories, based on theoretical work by Charles H. Townes and Arthur Leonard Schawlow. A laser differs from other sources of light in that it emits light that is coherent.
Gallium nitrideGallium nitride () is a binary III/V direct bandgap semiconductor commonly used in blue light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronic, high-power and high-frequency devices. For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without requiring nonlinear optical frequency-doubling.
Bipolar junction transistorA bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor, such as a field-effect transistor (FET), uses only one kind of charge carrier. A bipolar transistor allows a small current injected at one of its terminals to control a much larger current flowing between the terminals, making the device capable of amplification or switching. BJTs use two p–n junctions between two semiconductor types, n-type and p-type, which are regions in a single crystal of material.
TrimethylgalliumTrimethylgallium, often abbreviated to TMG or TMGa, is the organogallium compound with the formula Ga(CH3)3. It is a colorless, pyrophoric liquid. Unlike trimethylaluminium, TMG adopts a monomeric structure. When examined in detail, the monomeric units are clearly linked by multiple weak Ga---C interactions, reminiscent of the situation for trimethylindium. Two forms of TMG are typically investigated: Lewis base adducts or TMG itself. All are prepared by reactions of gallium trichloride with various methylating agents.
Helium–neon laserA helium–neon laser or He-Ne laser is a type of gas laser whose high energetic medium gain medium consists of a mixture of ratio(between 5:1 and 20:1) of helium and neon at a total pressure of about 1 torr inside of a small electrical discharge. The best-known and most widely used He-Ne laser operates at a wavelength of 632.8 nm, in the red part of the visible spectrum. The first He-Ne lasers emitted infrared at 1150 nm, and were the first gas lasers and the first lasers with continuous wave output.
Laser pointerA laser pointer or laser pen is a small handheld device with a power source (usually a battery) and a laser diode emitting a very narrow coherent low-powered laser beam of visible light, intended to be used to highlight something of interest by illuminating it with a small bright spot of colored light. The small width of the beam and low power of typical laser pointers make the beam itself invisible in a clean atmosphere, only showing a point of light when striking an opaque surface.
PhotodiodeA photodiode is a light-sensitive semiconductor diode. It produces current when it absorbs photons. The package of a photodiode allows light (or infrared or ultraviolet radiation, or X-rays) to reach the sensitive part of the device. The package may include lenses or optical filters. Devices designed for use specially as a photodiode use a PIN junction rather than a p–n junction, to increase the speed of response. Photodiodes usually have a slower response time as their surface area increases.
