Formation of charged ferroelectric domain walls with controlled periodicity
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Pb(Mg1/3Nb2/3)O-3 thin films were prepared from modified alkoxide solution precursors and their dielectric and electromechanical characteristics were investigated. Preparation of the films is very sensitive to processing parameters. The influence of differ ...
Bismuth titanate (Bi4Ti3O12) shows promise in piezoelectric applications in a temperature range (300-600 °C) which is not well served by standard piezoelectric ceramics. The proposal to use bismuth titanate ceramics for these applications has a major flaw, ...
Systems with a ferroelectric to paraelectric transition in the vicinity of room temperature are useful for devices. Adjusting the ferroelectric transition temperature (T-c) is traditionally accomplished by chemical substitution - as in BaxSr1-xTiO3, the ma ...
The present study aims at a better understanding of the high piezoelectric properties encountered in lead-based ferroelectrics by focusing on the extrinsic contributions to the response. The main characteristics of these materials are the highly nonlinear ...
The orientation dependence of the longitudinal piezoelectric coefficient, d(33)(*), is investigated as a function of temperature in BaTiO3 and PbTiO3 crystals using the Landau-Ginsburg-Devonshire theory. We show that a presence of the ferroelectric-ferroel ...
Very strong coefficients for spontaneous and piezoelectric polarizations have recently been predicted for III-V nitride semiconductors with natural wurtzite symmetry. Such polarizations influence significantly the mechanisms of radiative emissions in quant ...
(Al,Ga)N/GaN quantum wells have been studied by temperature-dependent luminescence and reflectivity. The samples were grown by molecular beam epitaxy on (0001) sapphire substrates, and well widths were varied from 3 to 15 monolayers (ML's) with a 2-ML incr ...
Electrostatic effects which take place in group-m nitrides in their wurtzite crystallographic phase have important consequences on the optical properties of (Al,Ga)N/GaN multiple quantum wells. A low-temperature photoluminescence study shows that the behav ...
Transient photocurrents are investigated in ferroelectric lead zirconate titanate (PZT) films illuminated by laser pulses in the spectral range of 340-380 nm. At low electric fields, the photocurrent is sensitive to the ferroelectric polarization state and ...
Fatigue phenomena occurring in Pb(ZrxTi1-x)O-3 ferroelectric thin-film capacitors (FECAP) with Pt electrodes are studied by means of conduction measurements in the cold-field-emission (tunneling) regime. We have determined that conduction in virgin FECAPs ...