Microengineered CH3NH3PbI3 Nanowire/Graphene Phototransistor for Low-Intensity Light Detection at Room Temperature
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Theoretical research on the two-dimensional crystal structure of hexagonal boron nitride (h-BN) has suggested that the physical properties of h-BN can be tailored for a wealth of applications by controlling the atomic structure of the membrane edges. Unexp ...
Graphene represents the first practical realization of crystalline supports in biological transmission electron microscopy (TEM) since their introduction over 30 years ago. The high transparency, minimal inelastic cross-section, and electrical conductivity ...
American Chemical Society (ACS)2011
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We have performed a near-edge X-ray absorption fine-structure (NEXAFS) and a transmission electron microscopy (TEM) investigation of freely suspended graphene oxide (GO) sheets. We utilized a photoemission electron microscope to identify GO membranes and t ...
We report on the fabrication and electrical characterization of functionalized solid-state nanopores in low stress silicon nitride membranes. First, a pore of approximately 50 nm diameter was drilled using a focused ion beam technique, followed by the loca ...
Nanostructure ZnO hollow microspheres with average crystallite size of about 15 nm, and average diameters of about 1 mu m, were successfully fabricated through a novel hydrothermal method. Hollow microspheres were formed due to self-assembly of ZnO oblong ...
Single-layer MoS2 is a newly emerging two-dimensional semiconductor with a potentially wide range of applications in the fields of nanoelectronics and energy harvesting. The fact that it can be exfoliated down to single-layer thickness, makes MoS2 interest ...
Using high resolution transmission electron microscopy. we identify the specific atomic scale features in chemically derived graphene monolayers that originate from the oxidation-reduction treatment of graphene. The layers are found to comprise defect-free ...
Platinum silicide films are widely used in silicon devices for ohmic and Schottky contacts. It has been demonstrated in the recent years that Schottky barriers employing ultra-thin platinum silicide films (thickness < 10 nm) are useful for photodetection i ...
Type-II GaAs/AlAs multiple-quantum well samples groan by low-pressure metal-organic vapour-phase epitaxy have been investigated. The layered structures consist of 50 periods of either 2 monolayers (ML), 4 ML. 5 ML, 6 ML, or 7 ML GaAs embedded in 28 ML AlAs ...
Degradation defects induced by electron-beam bombardment in Zn1-xCdxSe/ZnSe (001) graded-index separate-confinement blue-green laser structures have been characterized by transmission electron microscopy. Most defects appear as tree-like arrangements of sm ...